STM6922 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STM6922
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 7 A

CARACTERÍSTICAS ELÉCTRICAS

   Carga de la puerta (Qg): 13.3 nC
   Conductancia de drenaje-sustrato (Cd): 123 pF
   Resistencia entre drenaje y fuente RDS(on): 0.026 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET STM6922

STM6922 Datasheet (PDF)

..1. Size:131K samhop
stm6922.pdf

GreenProductS TM6922S amHop Microelectronics C orp.Jan.22 ,2007Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.26 @ VG S = 10VS urface Mount Package.40V 7A33 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5S O-811

8.1. Size:720K samhop
stm6920.pdf

S T M6920S amHop Microelectronics C orp. Aug,18 2005 ver1.2Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.25 @ V G S = 10V40V 7AS urface Mount Package.45 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2A

8.2. Size:167K samhop
stm6928.pdf

GreenProductSTM6928aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14 @ VGS=10VSuface Mount Package.40V 9.5A16 @ VGS=4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi

8.3. Size:141K samhop
stm6926.pdf

GreenProductS TM6926S amHop Microelectronics C orp.Mar.29 ,2007Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.16 @ VG S = 10VS urface Mount Package.8.5A40V18 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5S O-81

8.4. Size:184K samhop
stm6924.pdf

GreenProductSTM6924aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.28 @ VGS=10VSuface Mount Package.40V 6.8A46 @ VGS=4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi

8.5. Size:697K samhop
stm6920a.pdf

S T M6920AS amHop Microelectronics C orp. Apr,08.2005Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.35 @ V G S = 10V40V 5AS urface Mount Package.62 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS OLU

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