STM6922 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STM6922
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Выходная емкость (Cd): 123 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.026 Ohm
Тип корпуса: SOP8
STM6922 Datasheet (PDF)
stm6922.pdf
GreenProductS TM6922S amHop Microelectronics C orp.Jan.22 ,2007Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.26 @ VG S = 10VS urface Mount Package.40V 7A33 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5S O-811
stm6920.pdf
S T M6920S amHop Microelectronics C orp. Aug,18 2005 ver1.2Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.25 @ V G S = 10V40V 7AS urface Mount Package.45 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2A
stm6928.pdf
GreenProductSTM6928aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14 @ VGS=10VSuface Mount Package.40V 9.5A16 @ VGS=4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi
stm6926.pdf
GreenProductS TM6926S amHop Microelectronics C orp.Mar.29 ,2007Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.16 @ VG S = 10VS urface Mount Package.8.5A40V18 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5S O-81
stm6924.pdf
GreenProductSTM6924aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.28 @ VGS=10VSuface Mount Package.40V 6.8A46 @ VGS=4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi
stm6920a.pdf
S T M6920AS amHop Microelectronics C orp. Apr,08.2005Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.35 @ V G S = 10V40V 5AS urface Mount Package.62 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS OLU
Другие MOSFET... STM6930A , FDMS7672 , STM6928 , FDMS7672AS , STM6926 , FDMS7676 , STM6924 , FDMS7682 , 10N60 , FDMS7692 , STM6920A , FDMS7692A , STM6920 , FDMS7694 , STM6916 , FDMS7698 , STM6915 .
