FDMS7698 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS7698
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: POWER56

Búsqueda de reemplazo de MOSFET FDMS7698

FDMS7698 Datasheet (PDF)

..1. Size:250K fairchild semi
fdms7698.pdf

May 2011FDMS7698N-Channel PowerTrench MOSFET 30 V, 22 A, 10 mFeatures General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 13.5 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 15 m at VGS = 4.5 V, ID = 11.0 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Package

..2. Size:385K onsemi
fdms7698.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:406K 1
fdms7692a.pdf

7.2. Size:416K 1
fdms7692.pdf

7.3. Size:334K fairchild semi
fdms7692a.pdf

June 2009FDMS7692AN-Channel PowerTrench MOSFET 30 V, 8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 Aringing of DC/DC converters using either synchronous or Advanced Package and S

7.4. Size:334K fairchild semi
fdms7692.pdf

June 2009FDMS7692N-Channel PowerTrench MOSFET 30 V, 7.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 13 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 13 m at VGS = 4.5 V, ID = 10 Aringing of DC/DC converters using either synchronous or Advanced Package an

7.5. Size:269K fairchild semi
fdms7694.pdf

July 2011FDMS7694N-Channel PowerTrench MOSFET 30 V, 9.5 mFeatures General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.5 Aringing of DC/DC converters using either synchronous or Advanced Package

7.6. Size:316K onsemi
fdms7694.pdf

FDMS7694N-Channel PowerTrench MOSFETGeneral Description30 V, 9.5 mThis N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 Aconventional switching PWM controllers.It has been optimized Max rDS(on) = 14.5

Otros transistores... FDMS7682 , STM6922 , FDMS7692 , STM6920A , FDMS7692A , STM6920 , FDMS7694 , STM6916 , IRFB4115 , STM6915 , FDMS7700S , STM6914 , FDMS8023S , STM6913A , FDMS8025S , STM6912 , FDMS8026S .

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