FDMS7698 - описание и поиск аналогов

May 2011 FDMS7698 N-Channel PowerTrench MOSFET 30 V, 22 A, 10 m Features General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 15 m at VGS = 4.5 V, ID = 11.0 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Package

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

June 2009 FDMS7692A N-Channel PowerTrench MOSFET 30 V, 8 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A improve the overall efficiency and to minimize switch node Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or Advanced Package and S

June 2009 FDMS7692 N-Channel PowerTrench MOSFET 30 V, 7.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 13 A improve the overall efficiency and to minimize switch node Max rDS(on) = 13 m at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or Advanced Package an

July 2011 FDMS7694 N-Channel PowerTrench MOSFET 30 V, 9.5 m Features General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.5 A ringing of DC/DC converters using either synchronous or Advanced Package

FDMS7694 N-Channel PowerTrench MOSFET General Description 30 V, 9.5 m This N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 A conventional switching PWM controllers.It has been optimized Max rDS(on) = 14.5