FDMS7700S Todos los transistores

 ..1. Size:465K  fairchild semi
 fdms7700s.pdf

December 2009 FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel 30 V, 30 A, 7.5 m N-Channel 30 V, 40 A, 2.4 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchr

 9.1. Size:384K  1
 fdms7670as.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.2. Size:406K  1
 fdms7692a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:503K  1
 fdms7672.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:416K  1
 fdms7692.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.5. Size:474K  1
 fdms7658as.pdf

FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 176 A, 1.9 m General Description Features The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A package technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A rDS(on) while ma

 9.6. Size:482K  fairchild semi
 fdms7672as.pdf

September 2009 FDMS7672AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS7672AS has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.5 m at VGS = 7 V, ID = 16 A package technologies have been combined to offer the lowest

 9.7. Size:288K  fairchild semi
 fdms7680.pdf

October 2014 FDMS7680 N-Channel PowerTrench MOSFET 30 V, 6.9 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 6.9 m at VGS = 10 V, ID = 14 A improve the overall efficiency and to minimize switch node Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A ringing of DC/DC converters using either synchronous or Advanced Package

 9.8. Size:362K  fairchild semi
 fdms7580.pdf

December 2009 FDMS7580 N-Channel Power Trench MOSFET 25 V, 7.5 m Features General Description Max rDS(on) = 7.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.1 m at VGS = 4.5 V, ID = 12 A ringing of DC/DC converters using either synchronous or Advanced Pack

 9.9. Size:399K  fairchild semi
 fdms7608s.pdf

June 2011 FDMS7608S Dual N-Channel PowerTrench MOSFET Q1 30 V, 22 A, 10.0 m Q2 30 V, 30 A, 6.3 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(

 9.10. Size:275K  fairchild semi
 fdms7682.pdf

July 2010 FDMS7682 N-Channel PowerTrench MOSFET 30 V, 6.3 m Features General Description Max rDS(on) = 6.3 m at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.4 m at VGS = 4.5 V, ID = 11 A ringing of DC/DC converters using either synchronous or Advanced Package and

 9.11. Size:271K  fairchild semi
 fdms7678.pdf

January 2015 FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 m Features General Description Max rDS(on) = 5.5 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15 A been especially tailored to minimize the on-state resistance. This High p

 9.12. Size:243K  fairchild semi
 fdms7670as.pdf

March 2010 FDMS7670AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS7670AS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.2 m at VGS = 7 V, ID = 19 A package technologies have been combined to offer the lowest Adv

 9.13. Size:290K  fairchild semi
 fdms7660.pdf

April 2009 FDMS7660 N-Channel PowerTrench MOSFET 30 V, 2.8 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.8 m at VGS = 10 V, ID = 25 A improve the overall efficiency and to minimize switch node Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 19 A ringing of DC/DC converters using either synchronous or conventional switc

 9.14. Size:464K  fairchild semi
 fdms7600as.pdf

December 2009 FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel 30 V, 30 A, 7.5 m N-Channel 30 V, 40 A, 2.8 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synch

 9.15. Size:359K  fairchild semi
 fdms7620s.pdf

March 2011 FDMS7620S Dual N-Channel PowerTrench MOSFET Q1 30 V, 10.1 A, 20.0 m Q2 30 V, 12.4 A, 11.2 m Features Q1 N-Channel General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 10.1 A This device includes two specialized MOSFETs in a unique dual Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 7.5 A Power 56 package. It is designed to provide an optimal synchro- no

 9.16. Size:325K  fairchild semi
 fdms7556s.pdf

September 2010 FDMS7556S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 m Features General Description The FDMS7556S has been designed to minimize losses in Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.65 m at VGS = 4.5 V, ID = 31 A package technologies have been combined to offer the lowest

 9.17. Size:334K  fairchild semi
 fdms7692a.pdf

June 2009 FDMS7692A N-Channel PowerTrench MOSFET 30 V, 8 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A improve the overall efficiency and to minimize switch node Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or Advanced Package and S

 9.18. Size:477K  fairchild semi
 fdms7660as.pdf

September 2009 FDMS7660AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 2.4 m Features General Description The FDMS7660AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.6 m at VGS = 7 V, ID = 23 A package technologies have been combined to offer the lowest

 9.19. Size:253K  fairchild semi
 fdms7560s.pdf

December 2009 FDMS7560S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 m Features General Description The FDMS7560S has been designed to minimize losses in Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 26 A package technologies have been combined to offer the lowest

 9.20. Size:251K  fairchild semi
 fdms7676.pdf

July 2009 FDMS7676 N-Channel PowerTrench MOSFET 30 V, 5.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.5 m at VGS = 10 V, ID = 19 A improve the overall efficiency and to minimize switch node Max rDS(on) = 7.6 m at VGS = 4.5 V, ID = 15 A ringing of DC/DC converters using either synchronous or conventional switch

 9.21. Size:349K  fairchild semi
 fdms7572s.pdf

January 2010 FDMS7572S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 m Features General Description The FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m at VGS = 4.5 V, ID = 18 A package technologies have been combined to offer the lowest

 9.22. Size:323K  fairchild semi
 fdms7672.pdf

April 2009 FDMS7672 N-Channel PowerTrench MOSFET 30 V, 5.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 19 A improve the overall efficiency and to minimize switch node Max rDS(on) = 6.9 m at VGS = 4.5 V, ID = 15 A ringing of DC/DC converters using either synchronous or conventional switc

 9.23. Size:319K  fairchild semi
 fdms7670.pdf

April 2009 FDMS7670 N-Channel PowerTrench MOSFET 30 V, 3.8 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 21 A improve the overall efficiency and to minimize switch node Max rDS(on) = 5.0 m at VGS = 4.5 V, ID = 17 A ringing of DC/DC converters using either synchronous or conventional switc

 9.24. Size:361K  fairchild semi
 fdms7578.pdf

December 2009 FDMS7578 N-Channel Power Trench MOSFET 25 V, 5.8 m Features General Description Max rDS(on) = 5.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 8 m at VGS = 4.5 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Package

 9.25. Size:392K  fairchild semi
 fdms7606.pdf

May 2011 FDMS7606 Dual N-Channel PowerTrench MOSFET Q1 30 V, 12 A, 11.4 m Q2 30 V, 22 A, 11.6 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m at VGS = 10 V, ID = 11.5 A connected to enable easy placement and routing of synchronous Max rDS(

 9.26. Size:334K  fairchild semi
 fdms7692.pdf

June 2009 FDMS7692 N-Channel PowerTrench MOSFET 30 V, 7.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 13 A improve the overall efficiency and to minimize switch node Max rDS(on) = 13 m at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or Advanced Package an

 9.27. Size:305K  fairchild semi
 fdms7656as.pdf

September 2009 FDMS7656AS N-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 m Features General Description The FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 A package technologies have been combined to offer the lowest

 9.28. Size:400K  fairchild semi
 fdms7602s.pdf

August 2010 FDMS7602S Dual N-Channel PowerTrench MOSFET Q1 30 V, 30 A, 7.5 m Q2 30 V, 30 A, 5.0 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(on

 9.29. Size:341K  fairchild semi
 fdms7570s.pdf

December 2009 FDMS7570S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 m Features General Description The FDMS7570S has been designed to minimize losses in Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.85 m at VGS = 4.5 V, ID = 22 A package technologies have been combined to offer the lowes

 9.30. Size:250K  fairchild semi
 fdms7698.pdf

May 2011 FDMS7698 N-Channel PowerTrench MOSFET 30 V, 22 A, 10 m Features General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 15 m at VGS = 4.5 V, ID = 11.0 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Package

 9.31. Size:269K  fairchild semi
 fdms7694.pdf

July 2011 FDMS7694 N-Channel PowerTrench MOSFET 30 V, 9.5 m Features General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.5 A ringing of DC/DC converters using either synchronous or Advanced Package

 9.32. Size:334K  fairchild semi
 fdms7558s.pdf

December 2009 FDMS7558S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.25 m Features General Description The FDMS7558S has been designed to minimize losses in Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.75 m at VGS = 4.5 V, ID = 28 A package technologies have been combined to offer the lowes

 9.33. Size:470K  fairchild semi
 fdms7658as.pdf

September 2009 FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 m Features General Description The FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A package technologies have been combined to offer the lowest

 9.34. Size:285K  fairchild semi
 fdms7650.pdf

August 2009 FDMS7650 N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 A improve the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 A ringing of DC/DC converters using either synchronous or Advance

 9.35. Size:503K  onsemi
 fdms7672as.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.36. Size:415K  onsemi
 fdms7682.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.37. Size:382K  onsemi
 fdms7660.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.38. Size:415K  onsemi
 fdms7620s.pdf

FDMS7620S Dual N-Channel PowerTrench MOSFET Q1 30 V, 13 A, 20.0 m Q2 30 V, 22 A, 11.2 m Features General Description Q1 N-Channel This device includes two specialized MOSFETs in a unique dual Max rDS(on) = 20.0 m at VGS = 10 V, ID = 10.1 A Power 56 package. It is designed to provide an optimal synchro- Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 7.5 A nous buck power sta

 9.39. Size:535K  onsemi
 fdms7572s.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.40. Size:431K  onsemi
 fdms7570s.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.41. Size:385K  onsemi
 fdms7698.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.42. Size:316K  onsemi
 fdms7694.pdf

FDMS7694 N-Channel PowerTrench MOSFET General Description 30 V, 9.5 m This N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 A conventional switching PWM controllers.It has been optimized Max rDS(on) = 14.5

 9.43. Size:427K  onsemi
 fdms7558s.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.44. Size:474K  onsemi
 fdms7658as.pdf

FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 176 A, 1.9 m General Description Features The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A package technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A rDS(on) while ma

 9.45. Size:386K  onsemi
 fdms7650.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur