December 2009FDMS7700SDual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 m N-Channel: 30 V, 40 A, 2.4 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchr

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma

September 2009FDMS7672ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 mFeatures General DescriptionThe FDMS7672AS has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.5 m at VGS = 7 V, ID = 16 Apackage technologies have been combined to offer the lowest

October 2014FDMS7680N-Channel PowerTrench MOSFET 30 V, 6.9 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 6.9 m at VGS = 10 V, ID = 14 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 Aringing of DC/DC converters using either synchronous or Advanced Package

December 2009FDMS7580N-Channel Power Trench MOSFET 25 V, 7.5 mFeatures General Description Max rDS(on) = 7.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.1 m at VGS = 4.5 V, ID = 12 Aringing of DC/DC converters using either synchronous or Advanced Pack

June 2011FDMS7608SDual N-Channel PowerTrench MOSFET Q1: 30 V, 22 A, 10.0 m Q2: 30 V, 30 A, 6.3 m Features General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(

July 2010FDMS7682N-Channel PowerTrench MOSFET 30 V, 6.3 mFeatures General Description Max rDS(on) = 6.3 m at VGS = 10 V, ID = 14 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.4 m at VGS = 4.5 V, ID = 11 Aringing of DC/DC converters using either synchronous or Advanced Package and

January 2015FDMS7678N-Channel Power Trench MOSFET30 V, 26 A, 5.5 mFeatures General Description Max rDS(on) = 5.5 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15 Abeen especially tailored to minimize the on-state resistance. This High p

March 2010FDMS7670ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 mFeatures General DescriptionThe FDMS7670AS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.2 m at VGS = 7 V, ID = 19 Apackage technologies have been combined to offer the lowest Adv

April 2009FDMS7660N-Channel PowerTrench MOSFET 30 V, 2.8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.8 m at VGS = 10 V, ID = 25 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 19 Aringing of DC/DC converters using either synchronous or conventional switc

December 2009FDMS7600ASDual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 m N-Channel: 30 V, 40 A, 2.8 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synch

March 2011FDMS7620SDual N-Channel PowerTrench MOSFET Q1: 30 V, 10.1 A, 20.0 m Q2: 30 V, 12.4 A, 11.2 mFeaturesQ1: N-ChannelGeneral Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 10.1 AThis device includes two specialized MOSFETs in a unique dual Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 7.5 APower 56 package. It is designed to provide an optimal synchro-no

September 2010FDMS7556SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General DescriptionThe FDMS7556S has been designed to minimize losses in Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.65 m at VGS = 4.5 V, ID = 31 Apackage technologies have been combined to offer the lowest

June 2009FDMS7692AN-Channel PowerTrench MOSFET 30 V, 8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 Aringing of DC/DC converters using either synchronous or Advanced Package and S

September 2009FDMS7660ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 2.4 mFeatures General DescriptionThe FDMS7660AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.6 m at VGS = 7 V, ID = 23 Apackage technologies have been combined to offer the lowest

December 2009FDMS7560SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General DescriptionThe FDMS7560S has been designed to minimize losses in Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 26 Apackage technologies have been combined to offer the lowest

July 2009FDMS7676N-Channel PowerTrench MOSFET 30 V, 5.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.5 m at VGS = 10 V, ID = 19 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 7.6 m at VGS = 4.5 V, ID = 15 Aringing of DC/DC converters using either synchronous or conventional switch

January 2010FDMS7572SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 mFeatures General DescriptionThe FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m at VGS = 4.5 V, ID = 18 Apackage technologies have been combined to offer the lowest

April 2009FDMS7672N-Channel PowerTrench MOSFET 30 V, 5.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 19 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 6.9 m at VGS = 4.5 V, ID = 15 Aringing of DC/DC converters using either synchronous or conventional switc

April 2009FDMS7670N-Channel PowerTrench MOSFET 30 V, 3.8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 21 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 5.0 m at VGS = 4.5 V, ID = 17 Aringing of DC/DC converters using either synchronous or conventional switc

December 2009FDMS7578N-Channel Power Trench MOSFET 25 V, 5.8 mFeatures General Description Max rDS(on) = 5.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 8 m at VGS = 4.5 V, ID = 14 Aringing of DC/DC converters using either synchronous or Advanced Package

May 2011FDMS7606Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 m Q2: 30 V, 22 A, 11.6 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m at VGS = 10 V, ID = 11.5 Aconnected to enable easy placement and routing of synchronous Max rDS(

June 2009FDMS7692N-Channel PowerTrench MOSFET 30 V, 7.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 13 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 13 m at VGS = 4.5 V, ID = 10 Aringing of DC/DC converters using either synchronous or Advanced Package an

September 2009FDMS7656ASN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 Apackage technologies have been combined to offer the lowest

August 2010FDMS7602SDual N-Channel PowerTrench MOSFET Q1: 30 V, 30 A, 7.5 m Q2: 30 V, 30 A, 5.0 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(on

December 2009FDMS7570SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 mFeatures General DescriptionThe FDMS7570S has been designed to minimize losses in Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.85 m at VGS = 4.5 V, ID = 22 Apackage technologies have been combined to offer the lowes

May 2011FDMS7698N-Channel PowerTrench MOSFET 30 V, 22 A, 10 mFeatures General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 13.5 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 15 m at VGS = 4.5 V, ID = 11.0 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Package

July 2011FDMS7694N-Channel PowerTrench MOSFET 30 V, 9.5 mFeatures General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.5 Aringing of DC/DC converters using either synchronous or Advanced Package

December 2009FDMS7558SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.25 mFeatures General DescriptionThe FDMS7558S has been designed to minimize losses in Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.75 m at VGS = 4.5 V, ID = 28 Apackage technologies have been combined to offer the lowes

September 2009FDMS7658ASN-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mFeatures General DescriptionThe FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 Apackage technologies have been combined to offer the lowest

August 2009FDMS7650N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 Aringing of DC/DC converters using either synchronous or Advance

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS7620SDual N-Channel PowerTrench MOSFETQ1: 30 V, 13 A, 20.0 m Q2: 30 V, 22 A, 11.2 mFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized MOSFETs in a unique dual Max rDS(on) = 20.0 m at VGS = 10 V, ID = 10.1 APower 56 package. It is designed to provide an optimal synchro- Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 7.5 Anous buck power sta

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS7694N-Channel PowerTrench MOSFETGeneral Description30 V, 9.5 mThis N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 Aconventional switching PWM controllers.It has been optimized Max rDS(on) = 14.5

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur