OSG50R500AF Todos los transistores

 

OSG50R500AF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OSG50R500AF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.2 nS
   Cossⓘ - Capacitancia de salida: 38.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO251
 

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OSG50R500AF Datasheet (PDF)

 ..1. Size:376K  oriental semi
 osg50r500af.pdf pdf_icon

OSG50R500AF

OSG50R500AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:376K  oriental semi
 osg50r500ff.pdf pdf_icon

OSG50R500AF

OSG50R500FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:402K  oriental semi
 osg50r500pf.pdf pdf_icon

OSG50R500AF

OSG50R500PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:403K  oriental semi
 osg50r500df.pdf pdf_icon

OSG50R500AF

OSG50R500DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

MOSTRAR MÁS

Otros transistores... OSG07N65AF , OSG07N65DF , OSG07N65FF , OSG07N65PF , OSG50R1K5AF , OSG50R1K5DF , OSG50R1K5FF , OSG50R1K5PF , 7N65 , OSG50R500DF , OSG50R500FF , OSG50R500PF , OSG55R028HF , OSG55R028HTF , OSG55R030HZF , OSG55R070FF , OSG55R070HF .

History: FQPF12N60 | IRF7101TR

 

 
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