OSG50R500AF Datasheet. Specs and Replacement

Type Designator: OSG50R500AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.2 nS

Cossⓘ - Output Capacitance: 38.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO251

OSG50R500AF substitution

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OSG50R500AF datasheet

 ..1. Size:376K  oriental semi
 osg50r500af.pdf pdf_icon

OSG50R500AF

OSG50R500AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.1. Size:376K  oriental semi
 osg50r500ff.pdf pdf_icon

OSG50R500AF

OSG50R500FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.2. Size:402K  oriental semi
 osg50r500pf.pdf pdf_icon

OSG50R500AF

OSG50R500PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.3. Size:403K  oriental semi
 osg50r500df.pdf pdf_icon

OSG50R500AF

OSG50R500DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: OSG07N65AF, OSG07N65DF, OSG07N65FF, OSG07N65PF, OSG50R1K5AF, OSG50R1K5DF, OSG50R1K5FF, OSG50R1K5PF, IRF630, OSG50R500DF, OSG50R500FF, OSG50R500PF, OSG55R028HF, OSG55R028HTF, OSG55R030HZF, OSG55R070FF, OSG55R070HF

Keywords - OSG50R500AF MOSFET specs

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