OSG55R030HZF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OSG55R030HZF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 480 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105.2 nS

Cossⓘ - Capacitancia de salida: 669 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: TO247

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OSG55R030HZF datasheet

 ..1. Size:931K  oriental semi
 osg55r030hzf.pdf pdf_icon

OSG55R030HZF

OSG55R030HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 7.1. Size:929K  oriental semi
 osg55r092hf.pdf pdf_icon

OSG55R030HZF

OSG55R092HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.2. Size:912K  oriental semi
 osg55r099hszf.pdf pdf_icon

OSG55R030HZF

OSG55R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 7.3. Size:398K  oriental semi
 osg55r070hf.pdf pdf_icon

OSG55R030HZF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

MOSTRAR MÁS

Otros transistores... OSG50R1K5FF, OSG50R1K5PF, OSG50R500AF, OSG50R500DF, OSG50R500FF, OSG50R500PF, OSG55R028HF, OSG55R028HTF, IRF9540N, OSG55R070FF, OSG55R070HF, OSG55R074FZF, OSG55R074HZF, OSG55R092FF, OSG55R092HF, OSG55R099HSZF, OSG55R108FZF