OSG55R030HZF PDF and Equivalents Search

 

OSG55R030HZF Specs and Replacement


   Type Designator: OSG55R030HZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 105.2 nS
   Cossⓘ - Output Capacitance: 669 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO247
 

 OSG55R030HZF substitution

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OSG55R030HZF datasheet

 ..1. Size:931K  oriental semi
osg55r030hzf.pdf pdf_icon

OSG55R030HZF

OSG55R030HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 7.1. Size:929K  oriental semi
osg55r092hf.pdf pdf_icon

OSG55R030HZF

OSG55R092HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 7.2. Size:912K  oriental semi
osg55r099hszf.pdf pdf_icon

OSG55R030HZF

OSG55R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di... See More ⇒

 7.3. Size:398K  oriental semi
osg55r070hf.pdf pdf_icon

OSG55R030HZF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

Detailed specifications: OSG50R1K5FF , OSG50R1K5PF , OSG50R500AF , OSG50R500DF , OSG50R500FF , OSG50R500PF , OSG55R028HF , OSG55R028HTF , IRF9540N , OSG55R070FF , OSG55R070HF , OSG55R074FZF , OSG55R074HZF , OSG55R092FF , OSG55R092HF , OSG55R099HSZF , OSG55R108FZF .

History: KF5N50FS | AGM306AP

Keywords - OSG55R030HZF MOSFET specs

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