OSG55R290DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OSG55R290DF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.3 nS

Cossⓘ - Capacitancia de salida: 80.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO252

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OSG55R290DF datasheet

 ..1. Size:431K  oriental semi
 osg55r290df.pdf pdf_icon

OSG55R290DF

OSG55R290DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:397K  oriental semi
 osg55r290af.pdf pdf_icon

OSG55R290DF

OSG55R290AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:897K  oriental semi
 osg55r290pf.pdf pdf_icon

OSG55R290DF

OSG55R290PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:922K  oriental semi
 osg55r290ff.pdf pdf_icon

OSG55R290DF

OSG55R290FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

MOSTRAR MÁS

Otros transistores... OSG55R108HZF, OSG55R108KZF, OSG55R108PZF, OSG55R140FF, OSG55R140PF, OSG55R160HZF, OSG55R160PZF, OSG55R290AF, IRF530, OSG55R290FF, OSG55R290PF, OSG55R380AF, OSG55R380DF, OSG55R380FF, OSG55R380PF, OSG55R580AF, OSG55R580DEF