OSG55R290DF Datasheet. Specs and Replacement

Type Designator: OSG55R290DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.3 nS

Cossⓘ - Output Capacitance: 80.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO252

OSG55R290DF substitution

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OSG55R290DF datasheet

 ..1. Size:431K  oriental semi
 osg55r290df.pdf pdf_icon

OSG55R290DF

OSG55R290DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.1. Size:397K  oriental semi
 osg55r290af.pdf pdf_icon

OSG55R290DF

OSG55R290AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.2. Size:897K  oriental semi
 osg55r290pf.pdf pdf_icon

OSG55R290DF

OSG55R290PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.3. Size:922K  oriental semi
 osg55r290ff.pdf pdf_icon

OSG55R290DF

OSG55R290FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: OSG55R108HZF, OSG55R108KZF, OSG55R108PZF, OSG55R140FF, OSG55R140PF, OSG55R160HZF, OSG55R160PZF, OSG55R290AF, IRF530, OSG55R290FF, OSG55R290PF, OSG55R380AF, OSG55R380DF, OSG55R380FF, OSG55R380PF, OSG55R580AF, OSG55R580DEF

Keywords - OSG55R290DF MOSFET specs

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