STM6912 Todos los transistores

 

STM6912 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STM6912

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 111 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: SOP8

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STM6912 datasheet

 ..1. Size:556K  samhop
stm6912.pdf pdf_icon

STM6912

S T M6912 S amHop Microelectronics C orp. Aug,18 2005 ver 1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 32 @ V G S = 10V 30V 6A S urface Mount Package. 57 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G 1 S 2 G 2

 8.1. Size:134K  samhop
stm6914.pdf pdf_icon

STM6912

Green Product STM6914 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 32 @ VGS=10V Suface Mount Package. 30V 6.5A 52 @ VGS=4.5V D2 5 4 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 D1 8 1 S 1 1 ABSOLUTE MAXIMUM RATINGS

 8.2. Size:136K  samhop
stm6916.pdf pdf_icon

STM6912

Green Product STM6916 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 12.5 @ VGS=10V Suface Mount Package. 30V 10A 16 @ VGS=4.5V 5 4 D2 G 2 6 3 D2 S 2 D1 7 2 G 1 SO-8 8 1 D1 S 1 1 ABSOLUTE MAXIMUM RATINGS

 8.3. Size:116K  samhop
stm6915.pdf pdf_icon

STM6912

S TM6915 S amHop Microelectronics C orp. Dec, 12 2006 Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 19 @ VG S = 10V 30V 8.5A S urface Mount Package. 28 @ VG S = 4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABS OLUTE MAX

Otros transistores... STM6916 , FDMS7698 , STM6915 , FDMS7700S , STM6914 , FDMS8023S , STM6913A , FDMS8025S , IRF630 , FDMS8026S , STM6718 , FDMS8027S , STM6716 , FDMS8460 , FDMS86101 , STM6708 , FDMS86102LZ .

History: FDMS7700S

 

 

 


History: FDMS7700S

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