All MOSFET. STM6912 Datasheet

 

STM6912 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STM6912
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Qgⓘ - Total Gate Charge: 6.3 nC
   Cossⓘ - Output Capacitance: 111 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOP8

 STM6912 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STM6912 Datasheet (PDF)

 ..1. Size:556K  samhop
 stm6912.pdf

STM6912 STM6912

S T M6912S amHop Microelectronics C orp. Aug,18 2005 ver 1.2Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.32 @ V G S = 10V30V6AS urface Mount Package.57 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2

 8.1. Size:134K  samhop
 stm6914.pdf

STM6912 STM6912

GreenProductSTM6914aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.32 @ VGS=10VSuface Mount Package.30V 6.5A52 @ VGS=4.5V D2 5 4 G 26D2 3S 2D1 7 2G 1SO-8D1 8 1S 11ABSOLUTE MAXIMUM RATINGS

 8.2. Size:136K  samhop
 stm6916.pdf

STM6912 STM6912

GreenProductSTM6916aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=10VSuface Mount Package.30V 10A16 @ VGS=4.5V 5 4D2 G 26 3D2 S 2D1 7 2 G 1SO-88 1D1 S 11ABSOLUTE MAXIMUM RATINGS

 8.3. Size:116K  samhop
 stm6915.pdf

STM6912 STM6912

S TM6915S amHop Microelectronics C orp.Dec, 12 2006Dual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.19 @ VG S = 10V30V 8.5AS urface Mount Package.28 @ VG S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS OLUTE MAX

 8.4. Size:113K  samhop
 stm6913a.pdf

STM6912 STM6912

GreenProductS TM6913AS amHop Microelectronics C orp.Aug. 10 2012 ver1.2Dual N-Channel E nhancement Mode Field E ffect TransistorffffPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.18 @ VGS = 10V30V 8.2AS urface Mount Package.ff25 @ VGS =4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4

Datasheet: STM6916 , FDMS7698 , STM6915 , FDMS7700S , STM6914 , FDMS8023S , STM6913A , FDMS8025S , IRFP250N , FDMS8026S , STM6718 , FDMS8027S , STM6716 , FDMS8460 , FDMS86101 , STM6708 , FDMS86102LZ .

History: FDD8896

 

 
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