FDMS8026S Todos los transistores

 

FDMS8026S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS8026S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 41 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 22 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 27 nC

Resistencia drenaje-fuente RDS(on): 0.0043 Ohm

Empaquetado / Estuche: POWER56

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FDMS8026S Datasheet (PDF)

1.1. fdms8026s.pdf Size:289K _fairchild_semi

FDMS8026S
FDMS8026S

August 2010 FDMS8026S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m? Features General Description The FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m? at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m? at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Advanced p

3.1. fdms8025s.pdf Size:281K _fairchild_semi

FDMS8026S
FDMS8026S

August 2010 FDMS8025S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 m? Features General Description The FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m? at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m? at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rDS(on) whi

3.2. fdms8027s.pdf Size:286K _fairchild_semi

FDMS8026S
FDMS8026S

August 2010 FDMS8027S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m? Features General Description The FDMS8027S has been designed to minimize losses in Max rDS(on) = 5.0 m? at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m? at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest Advanced P

 3.3. fdms8023s.pdf Size:259K _fairchild_semi

FDMS8026S
FDMS8026S

August 2010 FDMS8023S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 m? Features General Description The FDMS8023S has been designed to minimize losses in Max rDS(on) = 2.4 m? at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m? at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rDS(on) whi

3.4. fdms8020.pdf Size:258K _fairchild_semi

FDMS8026S
FDMS8026S

November 2011 FDMS8020 N-Channel PowerTrench® MOSFET 30 V, 42 A, 2.5 mΩ Features General Description Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 26 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.6 mΩ at VGS = 4.5 V, ID = 21.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced P

Otros transistores... FDMS7698 , STM6915 , FDMS7700S , STM6914 , FDMS8023S , STM6913A , FDMS8025S , STM6912 , STF5N52U , STM6718 , FDMS8027S , STM6716 , FDMS8460 , FDMS86101 , STM6708 , FDMS86102LZ , STM6610 .

 
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