FDMS8026S MOSFET Datasheet: N-Ch, 30V, 22A. Full specification with pinout and replacement list

FDMS8026S Specs and Replacement

Type Designator: FDMS8026S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: POWER56

FDMS8026S substitution

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FDMS8026S datasheet

..1. Size:289K fairchild semi
fdms8026s.pdf pdf_icon

August 2010 FDMS8026S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Adv... See More ⇒

7.1. Size:281K fairchild semi
fdms8025s.pdf pdf_icon

August 2010 FDMS8025S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 m Features General Description The FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rDS(... See More ⇒

7.2. Size:286K fairchild semi
fdms8027s.pdf pdf_icon

August 2010 FDMS8027S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS8027S has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest Adv... See More ⇒

7.3. Size:258K fairchild semi
fdms8020.pdf pdf_icon

November 2011 FDMS8020 N-Channel PowerTrench MOSFET 30 V, 42 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 26 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.6 m at VGS = 4.5 V, ID = 21.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced P... See More ⇒