OSG60R060KT3ZF Todos los transistores

 

OSG60R060KT3ZF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OSG60R060KT3ZF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 440 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 52 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 88 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO263
 

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OSG60R060KT3ZF Datasheet (PDF)

 ..1. Size:889K  oriental semi
 osg60r060kt3zf.pdf pdf_icon

OSG60R060KT3ZF

OSG60R060KT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 5.1. Size:824K  oriental semi
 osg60r060ht3f.pdf pdf_icon

OSG60R060KT3ZF

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 5.2. Size:942K  oriental semi
 osg60r060pt3f.pdf pdf_icon

OSG60R060KT3ZF

OSG60R060PT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 5.3. Size:914K  oriental semi
 osg60r060hmf.pdf pdf_icon

OSG60R060KT3ZF

OSG60R060HMF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. Features Low R & FOM DS(ON) Ultra-low Q rr

MOSTRAR MÁS

Otros transistores... OSG60R038HT3ZF , OSG60R040HF , OSG60R041HZF , OSG60R055TT3F , OSG60R055TT3ZF , OSG60R060HMF , OSG60R060HT3F , OSG60R060HT3ZF , 60N06 , OSG60R060PT3F , OSG60R065JT3F , OSG60R069HF , OSG60R069HSF , OSG60R069HZF , OSG60R070FF , OSG60R070HF , OSG60R070HSF .

History: IPD031N03L

 

 
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