Справочник MOSFET. OSG60R060KT3ZF

 

OSG60R060KT3ZF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG60R060KT3ZF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 440 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 52 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 88 ns
   Cossⓘ - Выходная емкость: 210 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для OSG60R060KT3ZF

   - подбор ⓘ MOSFET транзистора по параметрам

 

OSG60R060KT3ZF Datasheet (PDF)

 ..1. Size:889K  oriental semi
osg60r060kt3zf.pdfpdf_icon

OSG60R060KT3ZF

OSG60R060KT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 5.1. Size:824K  oriental semi
osg60r060ht3f.pdfpdf_icon

OSG60R060KT3ZF

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 5.2. Size:942K  oriental semi
osg60r060pt3f.pdfpdf_icon

OSG60R060KT3ZF

OSG60R060PT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 5.3. Size:914K  oriental semi
osg60r060hmf.pdfpdf_icon

OSG60R060KT3ZF

OSG60R060HMF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. Features Low R & FOM DS(ON) Ultra-low Q rr

Другие MOSFET... OSG60R038HT3ZF , OSG60R040HF , OSG60R041HZF , OSG60R055TT3F , OSG60R055TT3ZF , OSG60R060HMF , OSG60R060HT3F , OSG60R060HT3ZF , 60N06 , OSG60R060PT3F , OSG60R065JT3F , OSG60R069HF , OSG60R069HSF , OSG60R069HZF , OSG60R070FF , OSG60R070HF , OSG60R070HSF .

History: CEP85N75 | SSM6P36FE | 2SK2826 | HM60N03D | FTK2102 | BUK9230-100B

 

 
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