OSG60R060KT3ZF
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: OSG60R060KT3ZF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 440
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 52
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 83
nC
trⓘ -
Время нарастания: 88
ns
Cossⓘ - Выходная емкость: 210
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06
Ohm
Тип корпуса:
TO263
Аналог (замена) для OSG60R060KT3ZF
OSG60R060KT3ZF
Datasheet (PDF)
..1. Size:889K oriental semi
osg60r060kt3zf.pdf OSG60R060KT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
5.1. Size:824K oriental semi
osg60r060ht3f.pdf OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
5.2. Size:942K oriental semi
osg60r060pt3f.pdf OSG60R060PT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
5.3. Size:914K oriental semi
osg60r060hmf.pdf OSG60R060HMF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. Features Low R & FOM DS(ON) Ultra-low Q rr
5.4. Size:926K oriental semi
osg60r060ht3zf.pdf OSG60R060HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
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