OSG60R070HSF Todos los transistores

 

OSG60R070HSF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OSG60R070HSF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 278 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 52.9 nS
   Cossⓘ - Capacitancia de salida: 337 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO247
 

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OSG60R070HSF Datasheet (PDF)

 ..1. Size:403K  oriental semi
 osg60r070hsf.pdf pdf_icon

OSG60R070HSF

 4.1. Size:935K  oriental semi
 osg60r070ht3f.pdf pdf_icon

OSG60R070HSF

OSG60R070HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 4.2. Size:398K  oriental semi
 osg60r070hf.pdf pdf_icon

OSG60R070HSF

OSG60R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 4.3. Size:931K  oriental semi
 osg60r070ht3zf.pdf pdf_icon

OSG60R070HSF

OSG60R070HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

MOSTRAR MÁS

Otros transistores... OSG60R060KT3ZF , OSG60R060PT3F , OSG60R065JT3F , OSG60R069HF , OSG60R069HSF , OSG60R069HZF , OSG60R070FF , OSG60R070HF , HY1906P , OSG60R070HT3F , OSG60R070HT3ZF , OSG60R070KT3ZF , OSG60R070PT3ZF , OSG60R074FSZF , OSG60R074HSZF , OSG60R074JT3ZF , OSG60R074KSZF .

History: AOW29S50 | UPA1792G

 

 
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