OSG60R074HSZF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OSG60R074HSZF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 278 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 88 nS

Cossⓘ - Capacitancia de salida: 354 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.074 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de OSG60R074HSZF MOSFET

- Selecciónⓘ de transistores por parámetros

 

OSG60R074HSZF datasheet

 ..1. Size:924K  oriental semi
 osg60r074hszf.pdf pdf_icon

OSG60R074HSZF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 4.1. Size:1106K  1
 osg60r074hzf osg60r074fzf.pdf pdf_icon

OSG60R074HSZF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc

 4.2. Size:379K  oriental semi
 osg60r074hzf.pdf pdf_icon

OSG60R074HSZF

OSG60R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:1017K  oriental semi
 osg60r074fzf.pdf pdf_icon

OSG60R074HSZF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

MOSTRAR MÁS

Otros transistores... OSG60R070FF, OSG60R070HF, OSG60R070HSF, OSG60R070HT3F, OSG60R070HT3ZF, OSG60R070KT3ZF, OSG60R070PT3ZF, OSG60R074FSZF, IRFZ44N, OSG60R074JT3ZF, OSG60R074KSZF, OSG60R075HSZF, OSG60R092FF, OSG60R092HF, OSG60R092HSF, OSG60R092HT3ZF, OSG60R092PT3ZF