OSG60R074HSZF Todos los transistores

 

OSG60R074HSZF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OSG60R074HSZF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 278 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 88 nS
   Cossⓘ - Capacitancia de salida: 354 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.074 Ohm
   Paquete / Cubierta: TO247
 

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OSG60R074HSZF Datasheet (PDF)

 ..1. Size:924K  oriental semi
 osg60r074hszf.pdf pdf_icon

OSG60R074HSZF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 4.1. Size:1106K  1
 osg60r074hzf osg60r074fzf.pdf pdf_icon

OSG60R074HSZF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc

 4.2. Size:379K  oriental semi
 osg60r074hzf.pdf pdf_icon

OSG60R074HSZF

OSG60R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:1017K  oriental semi
 osg60r074fzf.pdf pdf_icon

OSG60R074HSZF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

MOSTRAR MÁS

Otros transistores... OSG60R070FF , OSG60R070HF , OSG60R070HSF , OSG60R070HT3F , OSG60R070HT3ZF , OSG60R070KT3ZF , OSG60R070PT3ZF , OSG60R074FSZF , IRFZ44N , OSG60R074JT3ZF , OSG60R074KSZF , OSG60R075HSZF , OSG60R092FF , OSG60R092HF , OSG60R092HSF , OSG60R092HT3ZF , OSG60R092PT3ZF .

History: AIMW120R045M1 | ST18N10D | 2SK3296-ZJ | HTP2K1P10 | QM3002M3 | 2SK3674-01S | IXTP15N50L2

 

 
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