OSG60R074HSZF Datasheet. Specs and Replacement

Type Designator: OSG60R074HSZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 354 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm

Package: TO247

OSG60R074HSZF substitution

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OSG60R074HSZF datasheet

 ..1. Size:924K  oriental semi
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OSG60R074HSZF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di... See More ⇒

 4.1. Size:1106K  1
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OSG60R074HSZF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc... See More ⇒

 4.2. Size:379K  oriental semi
 osg60r074hzf.pdf pdf_icon

OSG60R074HSZF

OSG60R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 5.1. Size:1017K  oriental semi
 osg60r074fzf.pdf pdf_icon

OSG60R074HSZF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

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Detailed specifications: OSG60R070FF, OSG60R070HF, OSG60R070HSF, OSG60R070HT3F, OSG60R070HT3ZF, OSG60R070KT3ZF, OSG60R070PT3ZF, OSG60R074FSZF, IRFZ44N, OSG60R074JT3ZF, OSG60R074KSZF, OSG60R075HSZF, OSG60R092FF, OSG60R092HF, OSG60R092HSF, OSG60R092HT3ZF, OSG60R092PT3ZF

Keywords - OSG60R074HSZF MOSFET specs

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