FDMS8460 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS8460
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 49 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
Encapsulados: POWER56
Búsqueda de reemplazo de FDMS8460 MOSFET
- Selecciónⓘ de transistores por parámetros
FDMS8460 datasheet
fdms8460.pdf
May 2009 FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2m Features General Description Max rDS(on) = 2.2m at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process thant has Max rDS(on) = 3.0m at VGS = 4.5V, ID = 21.7A been especially tailored to minimize the on-state resistance and Advanced Pac
fdms8460.pdf
FDMS8460 MOSFET, N Channel, POWERTRENCH) 40 V, 49 A, 2.2 mW General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior S D switching performance. D S Features Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A D S
fdms86252.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86369-f085.pdf
2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u
fdms86550.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86102lz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86200.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86163p.pdf
DATA SHEET www.onsemi.com MOSFET P-Channel, BVDSS RDS(ON) MAX ID MAX POWERTRENCH) -100 V 22 mW @ -10 V -50 A -100 V, -50 A, 22 mW Top Bottom Pin 1 S FDMS86163P S S G General Description D D This P-Channel MOSFET is produced using onsemi s advanced D D Power 56 POWERTRENCH process that has been especially tailored to PQFN8 minimize the on-state resistance and yet main
fdms86201.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86105.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86150et100.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86320.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86540.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86322.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86250.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86252l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86182.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86520l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86500l.pdf
FDMS86500L MOSFET, N Channel, POWERTRENCH) 60 V, 158 A, 2.5 mW General Description www.onsemi.com This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or S D conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on),
fdms86380-f085.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fdms86183.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86310.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86581.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fdms86101.pdf
MOSFET - N Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N-Channel MOSFET is produced using ON Semiconductor s www.onsemi.com advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S D Features D S Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max
fdms86263p.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86104.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8018.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86252.pdf
August 2010 FDMS86252 N-Channel PowerTrench MOSFET 150 V, 16 A, 51 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and yet maintain
fdms86520.pdf
October 2014 FDMS86520 N-Channel PowerTrench MOSFET 60 V, 42 A, 7.4 m Features General Description Max rDS(on) = 7.4 m at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.3 m at VGS = 8 V, ID = 12.5 A ringing of DC/DC converters using either synchronous or Advanced Pa
fdms86255.pdf
December 2013 FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 1
fdms8026s.pdf
August 2010 FDMS8026S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Adv
fdms8690.pdf
February 2007 FDMS8690 tm N-Channel Power Trench MOSFET 30V, 27A, 9.0m Features General Description Max rDS(on) = 9.0m at VGS = 10V, ID = 14.0A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 12.5m at VGS = 4.5V, ID = 11.5A MOSFET construction, the various components of gate charge High
fdms86500dc.pdf
July 2013 FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process. Max rDS(on) = 2.3 m at VGS = 10 V, ID = 29 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at
fdms8670s.pdf
October 2014 FDMS8670S tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.5m Features General Description The FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20A power conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17A package technologies have been combined to offer the lowest Adva
fdms86150.pdf
November 2013 FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the
fdms8558sdc.pdf
July 2013 FDMS8558SDC N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3
fdms86550.pdf
April 2014 FDMS86550 N-Channel PowerTrench MOSFET 60 V, 155 A, 1.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 2.2 m at VGS = 8 V, ID = 27 A been especially tailored to minimize the on-state resistance and Advanced Pa
fdms86103l.pdf
December 2010 FDMS86103L N-Channel PowerTrench MOSFET 100 V, 49 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 12 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Advanced
fdms8025s.pdf
August 2010 FDMS8025S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 m Features General Description The FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rDS(
fdms86102lz.pdf
May 2011 FDMS86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 25 m Features General Description Max rDS(on) = 25 m at VGS = 10 V, ID = 7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process Max rDS(on) = 37 m at VGS = 4.5 V, ID = 5.8 A that has been special tailored to minimize the on-state HBM ESD protection
fdms8848nz.pdf
May 2009 FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 m Features General Description The FDMS8848NZ has been designed to minimize losses in Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22.8 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.1 m at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest
fdms86350.pdf
November 2013 FDMS86350 N-Channel PowerTrench MOSFET 80 V, 130 A, 2.4 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 3.2 m at VGS = 8 V, ID = 22 A been especially tailored to minimize the on-state resistance and Advanced
fdms8027s.pdf
August 2010 FDMS8027S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS8027S has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest Adv
fdms8622.pdf
July 2011 FDMS8622 N-Channel Power Trench MOSFET 100 V, 16.5 A, 56 m Features General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A been optimized for rDS(on), switching performance and High performance trench
fdms8050.pdf
August 2014 FDMS8050 N-Channel PowerTrench MOSFET 30 V, 200 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 m at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced P
fdms86200.pdf
Preliminary Datasheet April 2010 FDMS86200 N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A been especially tailored to minimize the on-state resistance
fdms86163p.pdf
October 2014 FDMS86163P P-Channel PowerTrench MOSFET -100 V, -50 A, 22 m Features General Description Max rDS(on) = 22 m at VGS = -10 V, ID = -7.9 A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 30 m at VGS = -6 V, ID = -5.9 A Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Very l
fdms8320ldc.pdf
December 2014 FDMS8320LDC N-Channel Dual CoolTM Power Trench MOSFET 40 V, 192 A, 1.1 m Features General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 44 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 37 A Semiconductor s advanced Power Trench process. Advancements in both silicon and Dual CoolTM package Advanced Packa
fdms8020.pdf
November 2011 FDMS8020 N-Channel PowerTrench MOSFET 30 V, 42 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 26 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.6 m at VGS = 4.5 V, ID = 21.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced P
fdms86201.pdf
Preliminary Datasheet April 2010 FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 A been especially tailored to minimize the on-state r
fdms86105.pdf
January 2011 FDMS86105 N-Channel PowerTrench MOSFET 100 V, 26 A, 34 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 34 m at VGS = 10 V, ID = 6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 54 m at VGS = 6 V, ID = 4.5 A been especially tailored to minimize the on-state resistance and yet maintain s
fdms86150et100.pdf
January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p
fdms8660as.pdf
May 2009 FDMS8660AS tm N-Channel PowerTrench SyncFETTM 30V, 49A, 2.1m Features General Description Max rDS(on) = 2.1m at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 3.1m at VGS = 4.5V, ID = 22A package technologies have been combined to offer the lowest Advance
fdms86320.pdf
October 2014 FDMS86320 N-Channel PowerTrench MOSFET 80 V, 44 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or Advanced P
fdms86540.pdf
October 2014 FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 m Features General Description Max rDS(on) = 3.4 m at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 8 V, ID = 18.5 A ringing of DC/DC converters using either synchronous or Advanced Pac
fdms86322.pdf
October 2010 FDMS86322 N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 A been especially tailored to minimize the on-state resistance and Advanced P
fdms8670.pdf
May 2009 FDMS8670 tm N-Channel Power Trench MOSFET 30V, 42A, 2.6m Features General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18A has been especially tailored to minimize on-resistance. This part 100% UIL T
fdms86550et60.pdf
January 2015 FDMS86550ET60 N-Channel PowerTrench MOSFET 60 V, 245 A, 1.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 A been especially tailored to minimize the on-state resistance and yet maintain superior s
fdms8320l.pdf
October 2014 FDMS8320L N-Channel PowerTrench MOSFET 40 V, 100 A, 1.1 m Features General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 27 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa
fdms86101a.pdf
October 2014 FDMS86101A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A incorporates Shielded Gate technology. This process has been optimized for the on-stat
fdms86250.pdf
October 2014 FDMS86250 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 30 A, 25 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 25 m at VGS = 10 V, ID = 6.7 A incorporates Shielded Gate technology. This process has been optimized for the on-st
fdms8672s.pdf
May 2009 FDMS8672S N-Channel PowerTrench SyncFETTM 30V, 35A, 5m Features General Description The FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17A power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advanced Packa
fdms8350l.pdf
November 2014 FDMS8350L N-Channel PowerTrench MOSFET 40 V, 200 A, 0.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 0.85 m at VGS = 10 V, ID = 47 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 A been especially tailored to minimize the on-state resistance and Advanc
fdms86202.pdf
July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 64 A, 7.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This process has been optimized for the on-s
fdms8558s.pdf
October 2014 FDMS8558S(PCN) N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,
fdms86252l.pdf
October 2014 FDMS86252L N-Channel Shielded Gate PowerTrench MOSFET 150 V, 12 A, 56 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.4 A incorporates Shielded Gate technology. This process has been optimized for the on
fdms86200dc.pdf
December 2013 FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) =
fdms8660s.pdf
June 2008 FDMS8660S tm N-Channel PowerTrench SyncFETTM 30V, 40A, 2.4m Features General Description The FDMS8660S has been designed to minimize losses in Max rDS(on) = 2.4m at VGS = 10V, ID = 25A power conversion applications. Advancements in both silicon Max rDS(on) = 3.5m at VGS = 4.5V, ID = 21A and package technologies have been combined to offer the Advanced Pack
fdms86150a.pdf
December 2014 FDMS86150A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the
fdms8023s.pdf
August 2010 FDMS8023S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 m Features General Description The FDMS8023S has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rDS(
fdms86520l.pdf
April 2011 FDMS86520L N-Channel PowerTrench MOSFET 60 V, 22 A, 8.2 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.2 m at VGS = 10 V, ID = 13.5 A improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or conventi
fdms86500l.pdf
March 2011 FDMS86500L N-Channel PowerTrench MOSFET 60 V, 49 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 25 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 3.7 m at VGS = 4.5 V, ID = 20 A ringing of DC/DC converters using either synchronous or Advanced Pac
fdms8680.pdf
October 2014 FDMS8680 tm N-Channel PowerTrench MOSFET 30V, 35A, 7.0m Features General Description Max rDS(on) = 7.0m at VGS = 10V, ID = 14A The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.0m at VGS = 4.5V, ID = 11.5A package technologies have been combined to offer the lowest Advance
fdms8674.pdf
May 2009 FDMS8674 tm N-Channel PowerTrench MOSFET 30V, 21A, 5.0m Features General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 17A The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 8.0m at VGS = 4.5V, ID = 14A package technologies have been combined to offer the lowest Advanced Packa
fdms86369 f085.pdf
March 2015 FDMS86369_F085 N-Channel PowerTrench MOSFET 80 V, 65 A, 7.5 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 65 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For current
fdms86310.pdf
October 2014 FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 m Features General Description Max rDS(on) = 4.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.7 m at VGS = 8 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Packa
fdms8692.pdf
May 2009 FDMS8692 tm N-Channel PowerTrench MOSFET 30V, 28A, 9.0m Features General Description Max rDS(on) = 9.0m at VGS = 10V, ID = 12A The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 14.0m at VGS = 4.5V, ID = 10.5A package technologies have been combined to offer the lowest Advanced Pa
fdms8050et30.pdf
January 2015 FDMS8050ET30 N-Channel PowerTrench MOSFET 30 V, 423 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Extended TJ rating to 175 C improve the overall efficiency and to minimize switch node Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A ringing of DC/DC converters using either synchronous or conventional switching PWM
fdms8560s.pdf
November 2014 FDMS8560S N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 m Features General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 A Advancements in both silicon and package technologies have High performance te
fdms8670as.pdf
May 2009 FDMS8670AS tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.0m Features General Description Max rDS(on) = 3.0m at VGS = 10V, ID = 23A The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7m at VGS = 4.5V, ID = 18A package technologies have been combined to offer the lowest Advance
fdms8820.pdf
October 2014 FDMS8820 N-Channel PowerTrench MOSFET 30 V, 116 A, 2.0 m Features General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 A ringing of DC/DC converters using either synchronous or Advanced Pac
fdms86300dc.pdf
December 2014 FDMS86300DC N-Channel Dual CoolTM PowerTrench MOSFET 80 V, 110 A, 3.1 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.0 m a
fdms8570sdc.pdf
July 2013 FDMS8570SDC N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 A Advancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2
fdms86152.pdf
February 2013 FDMS86152 N-Channel PowerTrench MOSFET 100 V, 45 A, 6 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 6 m at VGS = 10 V, ID = 14 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 6 V, ID = 11.5 A been especially tailored to minimize the on-state resistance and Advanced P
fdms86101dc.pdf
July 2013 FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 100 V, 60 A, 7.5 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5
fdms8333l.pdf
December 2014 FDMS8333L N-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 m Features General Description Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 A ringing of DC/DC converters using either synchronous or Advanced P
fdms8662.pdf
May 2009 FDMS8662 tm N-Channel PowerTrench MOSFET 30V, 49A, 2.0m Features General Description Max rDS(on) = 2.0m at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 3.0m at VGS = 4.5V, ID = 24A package technologies have been combined to offer the lowest Advanced Packa
fdms86255et150.pdf
January 2015 FDMS86255ET150 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 63 A, 12.4 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 A incorporates Shielded Gate technology. This
fdms86101.pdf
October 2010 FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 13.5 m at VGS = 6 V, ID = 9.5 A been especially tailored to minimize the on-state resistance and Advanced P
fdms86368 f085.pdf
December 2014 FDMS86368_F085 N-Channel PowerTrench MOSFET 80 V, 80 A, 4.5 m Features Typical RDS(on) = 3.7 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For cu
fdms86202et120.pdf
January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 102 A, 7.2 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This p
fdms86263p.pdf
October 2014 FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 m Features General Description Max rDS(on) = 53 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 64 m at VGS = -6 V, ID = -4 A Semiconductor s advanced PowerTrench technology. This very high density process is especially tailored to minimize Very low Rds-
fdms8672as.pdf
May 2009 FDMS8672AS tm N-Channel PowerTrench SyncFETTM 30V, 28A, 5.0m Features General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advance
fdms8880.pdf
October 2014 FDMS8880 N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.5 A The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 13.0 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowest
fdms8090.pdf
April 2013 FDMS8090 PowerTrench Symmetrical Dual 100 V N-Channel MOSFET Features General Description This device includes two fast switching (Qgd minimized) 100V Max rDS(on) = 13 m at VGS = 10 V, ID = 10 A N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) Max rDS(on) = 20 m at VGS = 6 V, ID = 8 A package. The package is enhanced for exceptional thermal performance.
fdms86300.pdf
August 2011 FDMS86300 N-Channel PowerTrench MOSFET 80 V, 42 A, 3.9 m Features General Description Max rDS(on) = 3.9 m at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.5 m at VGS = 8 V, ID = 15.5 A ringing of DC/DC converters using either synchronous or Advanced Pac
fdms86104.pdf
July 2010 FDMS86104 N-Channel PowerTrench MOSFET 100 V, 16 A, 24 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 39 m at VGS = 6 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Advanced Packa
fdms86350et80.pdf
January 2015 FDMS86350ET80 N-Channel PowerTrench MOSFET 80 V, 198 A, 2.4 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced Power Trench process that has Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A been especially tailored to minimize the on-state resistance and yet maintain superior sw
fdms8018.pdf
December 2011 FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 m Features General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 26 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa
fdms86568 f085.pdf
December 2014 FDMS86568_F085 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.5 m Features Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 55 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For cu
fdms8888.pdf
July 2011 FDMS8888 NNNN N-Channel PowerTrench MOSFET 30 V, 21 A, 9.5 m Features General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.5 A has been designed to minimize losses in power The FDMS8888 and conversion application. Advancements in both silicon Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowe
fdms8570s.pdf
November 2014 FDMS8570S N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 m Features General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 A Advancements in both silicon and package technologies have High performance te
fdms86252.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86255.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86369-f085.pdf
2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u
fdms86150.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86103l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86350.pdf
FDMS86350 N-Channel PowerTrench MOSFET General Description 80 V, 130 A, 2.4 m This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has Features been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 m at VGS = 8
fdms8622.pdf
August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 16.5 A, 56 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A incorporates Shielded Gate technology. This process has been Max rDS(o
fdms8050.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86200.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8d8n15c.pdf
FDMS8D8N15C N Channel Shielded Gate POWERTRENCH) MOSFET 150 V, 85 A, 8.8 mW General Description www.onsemi.com This N-Channel MV MOSFET is produced using ON Semiconductor s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to VDS RDS(ON) MAX ID MAX minimize on-state resistance and yet maintain superior switching performance w
fdms86540.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86322.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86550et60.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8320l.pdf
FDMS8320L N-Channel PowerTrench MOSFET General Description 40 V, 248 A, 1.1 m This N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized Max rDS(on)
fdms86101a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86368-f085.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fdms86180.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86250.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86202.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86252l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86182.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86200dc.pdf
MOSFET - PowerTrench), N-Channel, Dual CoolE, Shielded Gate 150 V, 40 A, 17 mW FDMS86200DC www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s ELECTRICAL CONNECTION advanced PowerTrench process that incorporates Shielded Gate technology. Advancements in both silicon and Dual CoolTM package S D technologies have been combined to offer the
fdms86500l.pdf
FDMS86500L MOSFET, N Channel, POWERTRENCH) 60 V, 158 A, 2.5 mW General Description www.onsemi.com This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or S D conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on),
fdms86183.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86310.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86181.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86381-f085.pdf
FDMS86381-F085 N-Channel PowerTrench MOSFET 80 V, 30 A, 22 m Features Typical RDS(on) = 17.2 m at VGS = 10V, ID = 30 A Typical Qg(tot) = 14 nC at VGS = 10V, ID = 30 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator D
fdms8820.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86300dc.pdf
FDMS86300DC POWERTRENCH) MOSFET, N-Channel, DUAL COOL) 56 80 V, 110 A, 3.1 mW General Description www.onsemi.com This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL package technologies have been combined to S D offer the lowes
fdms86581.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fdms86101dc.pdf
MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC www.onsemi.com General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon S D and DUAL COOL package technologies have been combined to
fdms86255et150.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86101.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86202et120.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8880.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8090.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86300.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86350et80.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8888.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FDMS8023S , STM6913A , FDMS8025S , STM6912 , FDMS8026S , STM6718 , FDMS8027S , STM6716 , 2N7002 , FDMS86101 , STM6708 , FDMS86102LZ , STM6610 , FDMS86103L , STM6375 , FDMS86104 , STM4973 .
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