FDMS8460 - описание и поиск аналогов

May 2009 FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2m Features General Description Max rDS(on) = 2.2m at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process thant has Max rDS(on) = 3.0m at VGS = 4.5V, ID = 21.7A been especially tailored to minimize the on-state resistance and Advanced Pac

FDMS8460 MOSFET, N Channel, POWERTRENCH) 40 V, 49 A, 2.2 mW General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior S D switching performance. D S Features Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A D S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

DATA SHEET www.onsemi.com MOSFET P-Channel, BVDSS RDS(ON) MAX ID MAX POWERTRENCH) -100 V 22 mW @ -10 V -50 A -100 V, -50 A, 22 mW Top Bottom Pin 1 S FDMS86163P S S G General Description D D This P-Channel MOSFET is produced using onsemi s advanced D D Power 56 POWERTRENCH process that has been especially tailored to PQFN8 minimize the on-state resistance and yet main

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS86500L MOSFET, N Channel, POWERTRENCH) 60 V, 158 A, 2.5 mW General Description www.onsemi.com This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or S D conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on),

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MOSFET - N Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N-Channel MOSFET is produced using ON Semiconductor s www.onsemi.com advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S D Features D S Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

August 2010 FDMS86252 N-Channel PowerTrench MOSFET 150 V, 16 A, 51 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and yet maintain

October 2014 FDMS86520 N-Channel PowerTrench MOSFET 60 V, 42 A, 7.4 m Features General Description Max rDS(on) = 7.4 m at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.3 m at VGS = 8 V, ID = 12.5 A ringing of DC/DC converters using either synchronous or Advanced Pa

December 2013 FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 1

August 2010 FDMS8026S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Adv

February 2007 FDMS8690 tm N-Channel Power Trench MOSFET 30V, 27A, 9.0m Features General Description Max rDS(on) = 9.0m at VGS = 10V, ID = 14.0A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 12.5m at VGS = 4.5V, ID = 11.5A MOSFET construction, the various components of gate charge High

July 2013 FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process. Max rDS(on) = 2.3 m at VGS = 10 V, ID = 29 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

October 2014 FDMS8670S tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.5m Features General Description The FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20A power conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17A package technologies have been combined to offer the lowest Adva

November 2013 FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

July 2013 FDMS8558SDC N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3

April 2014 FDMS86550 N-Channel PowerTrench MOSFET 60 V, 155 A, 1.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 2.2 m at VGS = 8 V, ID = 27 A been especially tailored to minimize the on-state resistance and Advanced Pa

December 2010 FDMS86103L N-Channel PowerTrench MOSFET 100 V, 49 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 12 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Advanced

August 2010 FDMS8025S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 m Features General Description The FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rDS(

May 2011 FDMS86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 25 m Features General Description Max rDS(on) = 25 m at VGS = 10 V, ID = 7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process Max rDS(on) = 37 m at VGS = 4.5 V, ID = 5.8 A that has been special tailored to minimize the on-state HBM ESD protection

May 2009 FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 m Features General Description The FDMS8848NZ has been designed to minimize losses in Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22.8 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.1 m at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest

November 2013 FDMS86350 N-Channel PowerTrench MOSFET 80 V, 130 A, 2.4 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 3.2 m at VGS = 8 V, ID = 22 A been especially tailored to minimize the on-state resistance and Advanced

August 2010 FDMS8027S N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS8027S has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest Adv

July 2011 FDMS8622 N-Channel Power Trench MOSFET 100 V, 16.5 A, 56 m Features General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A been optimized for rDS(on), switching performance and High performance trench

August 2014 FDMS8050 N-Channel PowerTrench MOSFET 30 V, 200 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 m at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced P

Preliminary Datasheet April 2010 FDMS86200 N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A been especially tailored to minimize the on-state resistance

October 2014 FDMS86163P P-Channel PowerTrench MOSFET -100 V, -50 A, 22 m Features General Description Max rDS(on) = 22 m at VGS = -10 V, ID = -7.9 A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 30 m at VGS = -6 V, ID = -5.9 A Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Very l

December 2014 FDMS8320LDC N-Channel Dual CoolTM Power Trench MOSFET 40 V, 192 A, 1.1 m Features General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 44 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 37 A Semiconductor s advanced Power Trench process. Advancements in both silicon and Dual CoolTM package Advanced Packa

November 2011 FDMS8020 N-Channel PowerTrench MOSFET 30 V, 42 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 26 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.6 m at VGS = 4.5 V, ID = 21.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced P

Preliminary Datasheet April 2010 FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 A been especially tailored to minimize the on-state r

January 2011 FDMS86105 N-Channel PowerTrench MOSFET 100 V, 26 A, 34 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 34 m at VGS = 10 V, ID = 6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 54 m at VGS = 6 V, ID = 4.5 A been especially tailored to minimize the on-state resistance and yet maintain s

January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p

May 2009 FDMS8660AS tm N-Channel PowerTrench SyncFETTM 30V, 49A, 2.1m Features General Description Max rDS(on) = 2.1m at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 3.1m at VGS = 4.5V, ID = 22A package technologies have been combined to offer the lowest Advance

October 2014 FDMS86320 N-Channel PowerTrench MOSFET 80 V, 44 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or Advanced P

October 2014 FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 m Features General Description Max rDS(on) = 3.4 m at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 8 V, ID = 18.5 A ringing of DC/DC converters using either synchronous or Advanced Pac

October 2010 FDMS86322 N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 A been especially tailored to minimize the on-state resistance and Advanced P

May 2009 FDMS8670 tm N-Channel Power Trench MOSFET 30V, 42A, 2.6m Features General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18A has been especially tailored to minimize on-resistance. This part 100% UIL T

January 2015 FDMS86550ET60 N-Channel PowerTrench MOSFET 60 V, 245 A, 1.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 A been especially tailored to minimize the on-state resistance and yet maintain superior s

October 2014 FDMS8320L N-Channel PowerTrench MOSFET 40 V, 100 A, 1.1 m Features General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 27 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa

October 2014 FDMS86101A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A incorporates Shielded Gate technology. This process has been optimized for the on-stat

October 2014 FDMS86250 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 30 A, 25 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 25 m at VGS = 10 V, ID = 6.7 A incorporates Shielded Gate technology. This process has been optimized for the on-st

May 2009 FDMS8672S N-Channel PowerTrench SyncFETTM 30V, 35A, 5m Features General Description The FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17A power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advanced Packa

November 2014 FDMS8350L N-Channel PowerTrench MOSFET 40 V, 200 A, 0.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 0.85 m at VGS = 10 V, ID = 47 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 A been especially tailored to minimize the on-state resistance and Advanc

July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 64 A, 7.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This process has been optimized for the on-s

October 2014 FDMS8558S(PCN) N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,

October 2014 FDMS86252L N-Channel Shielded Gate PowerTrench MOSFET 150 V, 12 A, 56 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.4 A incorporates Shielded Gate technology. This process has been optimized for the on

December 2013 FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) =

June 2008 FDMS8660S tm N-Channel PowerTrench SyncFETTM 30V, 40A, 2.4m Features General Description The FDMS8660S has been designed to minimize losses in Max rDS(on) = 2.4m at VGS = 10V, ID = 25A power conversion applications. Advancements in both silicon Max rDS(on) = 3.5m at VGS = 4.5V, ID = 21A and package technologies have been combined to offer the Advanced Pack

December 2014 FDMS86150A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

August 2010 FDMS8023S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 m Features General Description The FDMS8023S has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rDS(

April 2011 FDMS86520L N-Channel PowerTrench MOSFET 60 V, 22 A, 8.2 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.2 m at VGS = 10 V, ID = 13.5 A improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or conventi

March 2011 FDMS86500L N-Channel PowerTrench MOSFET 60 V, 49 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 25 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 3.7 m at VGS = 4.5 V, ID = 20 A ringing of DC/DC converters using either synchronous or Advanced Pac

October 2014 FDMS8680 tm N-Channel PowerTrench MOSFET 30V, 35A, 7.0m Features General Description Max rDS(on) = 7.0m at VGS = 10V, ID = 14A The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.0m at VGS = 4.5V, ID = 11.5A package technologies have been combined to offer the lowest Advance

May 2009 FDMS8674 tm N-Channel PowerTrench MOSFET 30V, 21A, 5.0m Features General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 17A The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 8.0m at VGS = 4.5V, ID = 14A package technologies have been combined to offer the lowest Advanced Packa

March 2015 FDMS86369_F085 N-Channel PowerTrench MOSFET 80 V, 65 A, 7.5 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 65 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For current

October 2014 FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 m Features General Description Max rDS(on) = 4.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.7 m at VGS = 8 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Packa

May 2009 FDMS8692 tm N-Channel PowerTrench MOSFET 30V, 28A, 9.0m Features General Description Max rDS(on) = 9.0m at VGS = 10V, ID = 12A The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 14.0m at VGS = 4.5V, ID = 10.5A package technologies have been combined to offer the lowest Advanced Pa

January 2015 FDMS8050ET30 N-Channel PowerTrench MOSFET 30 V, 423 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Extended TJ rating to 175 C improve the overall efficiency and to minimize switch node Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A ringing of DC/DC converters using either synchronous or conventional switching PWM

November 2014 FDMS8560S N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 m Features General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 A Advancements in both silicon and package technologies have High performance te

May 2009 FDMS8670AS tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.0m Features General Description Max rDS(on) = 3.0m at VGS = 10V, ID = 23A The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7m at VGS = 4.5V, ID = 18A package technologies have been combined to offer the lowest Advance

October 2014 FDMS8820 N-Channel PowerTrench MOSFET 30 V, 116 A, 2.0 m Features General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 A ringing of DC/DC converters using either synchronous or Advanced Pac

December 2014 FDMS86300DC N-Channel Dual CoolTM PowerTrench MOSFET 80 V, 110 A, 3.1 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.0 m a

July 2013 FDMS8570SDC N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 A Advancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2

February 2013 FDMS86152 N-Channel PowerTrench MOSFET 100 V, 45 A, 6 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 6 m at VGS = 10 V, ID = 14 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 6 V, ID = 11.5 A been especially tailored to minimize the on-state resistance and Advanced P

July 2013 FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 100 V, 60 A, 7.5 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5

December 2014 FDMS8333L N-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 m Features General Description Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 A ringing of DC/DC converters using either synchronous or Advanced P

May 2009 FDMS8662 tm N-Channel PowerTrench MOSFET 30V, 49A, 2.0m Features General Description Max rDS(on) = 2.0m at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 3.0m at VGS = 4.5V, ID = 24A package technologies have been combined to offer the lowest Advanced Packa

January 2015 FDMS86255ET150 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 63 A, 12.4 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 A incorporates Shielded Gate technology. This

October 2010 FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 13.5 m at VGS = 6 V, ID = 9.5 A been especially tailored to minimize the on-state resistance and Advanced P

December 2014 FDMS86368_F085 N-Channel PowerTrench MOSFET 80 V, 80 A, 4.5 m Features Typical RDS(on) = 3.7 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For cu

January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 102 A, 7.2 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This p

October 2014 FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 m Features General Description Max rDS(on) = 53 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 64 m at VGS = -6 V, ID = -4 A Semiconductor s advanced PowerTrench technology. This very high density process is especially tailored to minimize Very low Rds-

May 2009 FDMS8672AS tm N-Channel PowerTrench SyncFETTM 30V, 28A, 5.0m Features General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advance

October 2014 FDMS8880 N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.5 A The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 13.0 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowest

April 2013 FDMS8090 PowerTrench Symmetrical Dual 100 V N-Channel MOSFET Features General Description This device includes two fast switching (Qgd minimized) 100V Max rDS(on) = 13 m at VGS = 10 V, ID = 10 A N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) Max rDS(on) = 20 m at VGS = 6 V, ID = 8 A package. The package is enhanced for exceptional thermal performance.

August 2011 FDMS86300 N-Channel PowerTrench MOSFET 80 V, 42 A, 3.9 m Features General Description Max rDS(on) = 3.9 m at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.5 m at VGS = 8 V, ID = 15.5 A ringing of DC/DC converters using either synchronous or Advanced Pac

July 2010 FDMS86104 N-Channel PowerTrench MOSFET 100 V, 16 A, 24 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 39 m at VGS = 6 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Advanced Packa

January 2015 FDMS86350ET80 N-Channel PowerTrench MOSFET 80 V, 198 A, 2.4 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced Power Trench process that has Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A been especially tailored to minimize the on-state resistance and yet maintain superior sw

December 2011 FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 m Features General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 26 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa

December 2014 FDMS86568_F085 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.5 m Features Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 55 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For cu

July 2011 FDMS8888 NNNN N-Channel PowerTrench MOSFET 30 V, 21 A, 9.5 m Features General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.5 A has been designed to minimize losses in power The FDMS8888 and conversion application. Advancements in both silicon Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowe

November 2014 FDMS8570S N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 m Features General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 A Advancements in both silicon and package technologies have High performance te

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS86350 N-Channel PowerTrench MOSFET General Description 80 V, 130 A, 2.4 m This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has Features been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 m at VGS = 8

August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 16.5 A, 56 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A incorporates Shielded Gate technology. This process has been Max rDS(o

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS8D8N15C N Channel Shielded Gate POWERTRENCH) MOSFET 150 V, 85 A, 8.8 mW General Description www.onsemi.com This N-Channel MV MOSFET is produced using ON Semiconductor s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to VDS RDS(ON) MAX ID MAX minimize on-state resistance and yet maintain superior switching performance w

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS8320L N-Channel PowerTrench MOSFET General Description 40 V, 248 A, 1.1 m This N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized Max rDS(on)

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET - PowerTrench), N-Channel, Dual CoolE, Shielded Gate 150 V, 40 A, 17 mW FDMS86200DC www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s ELECTRICAL CONNECTION advanced PowerTrench process that incorporates Shielded Gate technology. Advancements in both silicon and Dual CoolTM package S D technologies have been combined to offer the

FDMS86500L MOSFET, N Channel, POWERTRENCH) 60 V, 158 A, 2.5 mW General Description www.onsemi.com This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or S D conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on),

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS86381-F085 N-Channel PowerTrench MOSFET 80 V, 30 A, 22 m Features Typical RDS(on) = 17.2 m at VGS = 10V, ID = 30 A Typical Qg(tot) = 14 nC at VGS = 10V, ID = 30 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator D

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS86300DC POWERTRENCH) MOSFET, N-Channel, DUAL COOL) 56 80 V, 110 A, 3.1 mW General Description www.onsemi.com This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL package technologies have been combined to S D offer the lowes

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC www.onsemi.com General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon S D and DUAL COOL package technologies have been combined to

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur