MDT30P10D - описание и поиск аналогов

MDT30P10D Silicon Silicon P-Channel Power MOSFET Description The MDT30P10D uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS=-110V, ID=-30A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching applicati

MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar Transistor Features Each transistor elements are independent Applications For low frequency amplify application MARKING 5G Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 150 mW Junction Temperature

60V N-Channel Power MOSFET DESCRIPTION The MDT30N06L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A RDS(ON)

100V N-Channel Power MOSFET DESCRIPTION The MPG30N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 100V,I =30A DS D R

100V N-Channel Power MOSFET DESCRIPTION The MDT30N10 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 30A R