MDT30P10D - Даташиты. Аналоги. Основные параметры

MDT30P10DSiliconSilicon P-Channel Power MOSFETDescriptionThe MDT30P10D uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS=-110V, ID=-30A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching applicati

MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar TransistorFeatures Each transistor elements are independentApplications For low frequency amplify applicationMARKING: 5GParameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAPower Dissipation Ptot 150 mWJunction Temperature

60V N-Channel Power MOSFETDESCRIPTIONThe MDT30N06L uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.KEY CHARACTERISTICS VDS = 60V,ID= 30ARDS(ON)

100V N-Channel Power MOSFETDESCRIPTIONThe MPG30N10 uses advanced trench technology toprovideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 100V,I =30ADS DR

100V N-Channel Power MOSFETDESCRIPTIONThe MDT30N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 30A R