MDT30P10D Datasheet and Replacement
Type Designator: MDT30P10D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252
MDT30P10D substitution
MDT30P10D Datasheet (PDF)
mdt30p10d.pdf
MDT30P10DSiliconSilicon P-Channel Power MOSFETDescriptionThe MDT30P10D uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS=-110V, ID=-30A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching applicati
mmdt3052dw.pdf
MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar TransistorFeatures Each transistor elements are independentApplications For low frequency amplify applicationMARKING: 5GParameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAPower Dissipation Ptot 150 mWJunction Temperature
mdt30n06l.pdf
60V N-Channel Power MOSFETDESCRIPTIONThe MDT30N06L uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.KEY CHARACTERISTICS VDS = 60V,ID= 30ARDS(ON)
mdt30n10d mpg30n10p.pdf
100V N-Channel Power MOSFETDESCRIPTIONThe MPG30N10 uses advanced trench technology toprovideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 100V,I =30ADS DR
Datasheet: SLH65R180E7C , SLH95R130GTZ , SLI13N50C , MD100N20 , MD20N50 , MD25N50 , MD50N20 , MD70N10 , IRFP260 , MDT4N65 , MPF10N65 , MPG08N68P , MPG08N68S , MPG120N06P , MPG120N06S , MPG150N10P , MPG150N10S .
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