STM4973 - описание и поиск аналогов

S T M4973 S E P .8 2004 S amHop Microelectronics C orp. Dual P-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 35 @ V G S = -10V -30V -6A S urface Mount Package. 50 @ V G S = -4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABS

STM4973 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View

S T M4952 S amHop Microelectronics C orp. May,24 2005 ver1.1 Dual P-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) MAX R ugged and reliable. 50 @ V G S = -4.5V -20V -5.2A S urface Mount Package. 80 @ V G S = -2.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G 1 S 2 G

Green Product S TM4953 S amHop Microelectronics C orp. J ul 05 2005 ver 1.2 Dual P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 55 @ VG S = -10V -30V -4.5A S urface Mount Package. 85 @ VG S = -4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S