All MOSFET. STM4973 Datasheet

 

STM4973 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STM4973
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Qgⓘ - Total Gate Charge: 10.5 nC
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP8

 STM4973 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STM4973 Datasheet (PDF)

 ..1. Size:890K  samhop
 stm4973.pdf

STM4973 STM4973

S T M4973 S E P .8 2004S amHop Microelectronics C orp.Dual P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MaxR ugged and reliable.35 @ V G S = -10V-30V -6AS urface Mount Package.50 @ V G S = -4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS

 ..2. Size:863K  cn vbsemi
 stm4973.pdf

STM4973 STM4973

STM4973www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View

 9.1. Size:655K  samhop
 stm4952.pdf

STM4973 STM4973

S T M4952S amHop Microelectronics C orp.May,24 2005 ver1.1Dual P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MAXR ugged and reliable.50 @ V G S = -4.5V-20V -5.2AS urface Mount Package.80 @ V G S = -2.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G

 9.2. Size:124K  samhop
 stm4953.pdf

STM4973 STM4973

GreenProductS TM4953S amHop Microelectronics C orp.J ul 05 2005 ver 1.2Dual P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.55 @ VG S = -10V-30V -4.5AS urface Mount Package.85 @ VG S = -4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTK21N100

 

 
Back to Top