STM4973 Todos los transistores

 

STM4973 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STM4973
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 6 A

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 10.5 nC
   Conductancia de drenaje-sustrato (Cd): 210 pF
   Resistencia entre drenaje y fuente RDS(on): 0.035 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET STM4973

 

STM4973 Datasheet (PDF)

 ..1. Size:890K  samhop
stm4973.pdf

STM4973
STM4973

S T M4973 S E P .8 2004S amHop Microelectronics C orp.Dual P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MaxR ugged and reliable.35 @ V G S = -10V-30V -6AS urface Mount Package.50 @ V G S = -4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS

 ..2. Size:863K  cn vbsemi
stm4973.pdf

STM4973
STM4973

STM4973www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View

 9.1. Size:655K  samhop
stm4952.pdf

STM4973
STM4973

S T M4952S amHop Microelectronics C orp.May,24 2005 ver1.1Dual P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MAXR ugged and reliable.50 @ V G S = -4.5V-20V -5.2AS urface Mount Package.80 @ V G S = -2.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G

 9.2. Size:124K  samhop
stm4953.pdf

STM4973
STM4973

GreenProductS TM4953S amHop Microelectronics C orp.J ul 05 2005 ver 1.2Dual P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.55 @ VG S = -10V-30V -4.5AS urface Mount Package.85 @ VG S = -4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S

Otros transistores... FDMS8460 , FDMS86101 , STM6708 , FDMS86102LZ , STM6610 , FDMS86103L , STM6375 , FDMS86104 , IRFB3607 , FDMS86105 , STM4953 , FDMS86200 , FDMS86201 , FDMS8622 , STM4952 , FDMS86252 , FDMS86300 .

 

 
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