OSG60R1K2DF Todos los transistores

 

OSG60R1K2DF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OSG60R1K2DF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18.4 nS
   Cossⓘ - Capacitancia de salida: 21.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO252
 

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OSG60R1K2DF Datasheet (PDF)

 ..1. Size:405K  oriental semi
 osg60r1k2df.pdf pdf_icon

OSG60R1K2DF

OSG60R1K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:1032K  oriental semi
 osg60r1k2pf.pdf pdf_icon

OSG60R1K2DF

OSG60R1K2PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:1000K  oriental semi
 osg60r1k2ff.pdf pdf_icon

OSG60R1K2DF

OSG60R1K2FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:371K  oriental semi
 osg60r1k2af.pdf pdf_icon

OSG60R1K2DF

OSG60R1K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

MOSTRAR MÁS

Otros transistores... OSG60R180IF , OSG60R180KF , OSG60R180PF , OSG60R190DT3ZF , OSG60R190DTF , OSG60R190FSZF , OSG60R190FT3ZF , OSG60R1K2AF , AO4407 , OSG60R1K2FF , OSG60R1K2PF , OSG60R1K8AF , OSG60R1K8DF , OSG60R1K8FF , OSG60R1K8PF , OSG60R200FSZF , OSG60R200JSZF .

History: SST202 | STD5NK50Z | CJD04N60A | NCE85H21TC | UT8205AL-S08-R | AO4932

 

 
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