OSG60R1K2DF Datasheet. Specs and Replacement

Type Designator: OSG60R1K2DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.4 nS

Cossⓘ - Output Capacitance: 21.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO252

OSG60R1K2DF substitution

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OSG60R1K2DF datasheet

 ..1. Size:405K  oriental semi
 osg60r1k2df.pdf pdf_icon

OSG60R1K2DF

OSG60R1K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.1. Size:1032K  oriental semi
 osg60r1k2pf.pdf pdf_icon

OSG60R1K2DF

OSG60R1K2PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.2. Size:1000K  oriental semi
 osg60r1k2ff.pdf pdf_icon

OSG60R1K2DF

OSG60R1K2FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.3. Size:371K  oriental semi
 osg60r1k2af.pdf pdf_icon

OSG60R1K2DF

OSG60R1K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: OSG60R180IF, OSG60R180KF, OSG60R180PF, OSG60R190DT3ZF, OSG60R190DTF, OSG60R190FSZF, OSG60R190FT3ZF, OSG60R1K2AF, IRF530, OSG60R1K2FF, OSG60R1K2PF, OSG60R1K8AF, OSG60R1K8DF, OSG60R1K8FF, OSG60R1K8PF, OSG60R200FSZF, OSG60R200JSZF

Keywords - OSG60R1K2DF MOSFET specs

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