FDMS8848NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS8848NZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 49 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
Paquete / Cubierta: POWER56
Búsqueda de reemplazo de FDMS8848NZ MOSFET
FDMS8848NZ Datasheet (PDF)
fdms8848nz.pdf
May 2009FDMS8848NZN-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 mFeatures General DescriptionThe FDMS8848NZ has been designed to minimize losses in Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22.8 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.1 m at VGS = 4.5 V, ID = 17.5 Apackage technologies have been combined to offer the lowest
fdms8820.pdf
October 2014FDMS8820N-Channel PowerTrench MOSFET30 V, 116 A, 2.0 mFeatures General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 Aringing of DC/DC converters using either synchronous or Advanced Pac
fdms8880.pdf
October 2014FDMS8880N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 mFeatures General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.5 AThe FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 13.0 m at VGS = 4.5 V, ID = 10.9 Apackage technologies have been combined to offer the lowest
fdms8888.pdf
July 2011FDMS8888 NNNNN-Channel PowerTrench MOSFET 30 V, 21 A, 9.5 mFeaturesGeneral Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.5 Ahas been designed to minimize losses in powerThe FDMS8888andconversion application. Advancements in both silicon Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowe
Otros transistores... FDMS86201 , FDMS8622 , STM4952 , FDMS86252 , FDMS86300 , FDMS86322 , FDMS86500L , FDMS86520L , NCEP15T14 , FDMS8888 , STM4886E , FDMS9620S , STM4886 , FDN302P , FDN304P , FDN304PZ , FDN306P .
History: WSD3030DN | TMAN7N90 | CM20N50 | SWD062R08E8T
History: WSD3030DN | TMAN7N90 | CM20N50 | SWD062R08E8T
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