FDMS8848NZ Todos los transistores

 

FDMS8848NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMS8848NZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 108 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: POWER56
 

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FDMS8848NZ Datasheet (PDF)

 ..1. Size:230K  fairchild semi
fdms8848nz.pdf pdf_icon

FDMS8848NZ

May 2009FDMS8848NZN-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 mFeatures General DescriptionThe FDMS8848NZ has been designed to minimize losses in Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22.8 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.1 m at VGS = 4.5 V, ID = 17.5 Apackage technologies have been combined to offer the lowest

 8.1. Size:282K  fairchild semi
fdms8820.pdf pdf_icon

FDMS8848NZ

October 2014FDMS8820N-Channel PowerTrench MOSFET30 V, 116 A, 2.0 mFeatures General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 Aringing of DC/DC converters using either synchronous or Advanced Pac

 8.2. Size:257K  fairchild semi
fdms8880.pdf pdf_icon

FDMS8848NZ

October 2014FDMS8880N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 mFeatures General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.5 AThe FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 13.0 m at VGS = 4.5 V, ID = 10.9 Apackage technologies have been combined to offer the lowest

 8.3. Size:308K  fairchild semi
fdms8888.pdf pdf_icon

FDMS8848NZ

July 2011FDMS8888 NNNNN-Channel PowerTrench MOSFET 30 V, 21 A, 9.5 mFeaturesGeneral Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.5 Ahas been designed to minimize losses in powerThe FDMS8888andconversion application. Advancements in both silicon Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowe

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