FDMS8848NZ Todos los transistores

 

FDMS8848NZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS8848NZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm

Encapsulados: POWER56

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FDMS8848NZ datasheet

 ..1. Size:230K  fairchild semi
fdms8848nz.pdf pdf_icon

FDMS8848NZ

May 2009 FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 m Features General Description The FDMS8848NZ has been designed to minimize losses in Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22.8 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.1 m at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest

 8.1. Size:282K  fairchild semi
fdms8820.pdf pdf_icon

FDMS8848NZ

October 2014 FDMS8820 N-Channel PowerTrench MOSFET 30 V, 116 A, 2.0 m Features General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 A ringing of DC/DC converters using either synchronous or Advanced Pac

 8.2. Size:257K  fairchild semi
fdms8880.pdf pdf_icon

FDMS8848NZ

October 2014 FDMS8880 N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.5 A The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 13.0 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowest

 8.3. Size:308K  fairchild semi
fdms8888.pdf pdf_icon

FDMS8848NZ

July 2011 FDMS8888 NNNN N-Channel PowerTrench MOSFET 30 V, 21 A, 9.5 m Features General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.5 A has been designed to minimize losses in power The FDMS8888 and conversion application. Advancements in both silicon Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowe

Otros transistores... FDMS86201 , FDMS8622 , STM4952 , FDMS86252 , FDMS86300 , FDMS86322 , FDMS86500L , FDMS86520L , NCEP15T14 , FDMS8888 , STM4886E , FDMS9620S , STM4886 , FDN302P , FDN304P , FDN304PZ , FDN306P .

History: SGSP361 | STM6926

 

 

 

 

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