Справочник MOSFET. FDMS8848NZ

 

FDMS8848NZ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMS8848NZ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 49 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm
   Тип корпуса: POWER56
     - подбор MOSFET транзистора по параметрам

 

FDMS8848NZ Datasheet (PDF)

 ..1. Size:230K  fairchild semi
fdms8848nz.pdfpdf_icon

FDMS8848NZ

May 2009FDMS8848NZN-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 mFeatures General DescriptionThe FDMS8848NZ has been designed to minimize losses in Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22.8 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.1 m at VGS = 4.5 V, ID = 17.5 Apackage technologies have been combined to offer the lowest

 8.1. Size:282K  fairchild semi
fdms8820.pdfpdf_icon

FDMS8848NZ

October 2014FDMS8820N-Channel PowerTrench MOSFET30 V, 116 A, 2.0 mFeatures General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 Aringing of DC/DC converters using either synchronous or Advanced Pac

 8.2. Size:257K  fairchild semi
fdms8880.pdfpdf_icon

FDMS8848NZ

October 2014FDMS8880N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 mFeatures General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.5 AThe FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 13.0 m at VGS = 4.5 V, ID = 10.9 Apackage technologies have been combined to offer the lowest

 8.3. Size:308K  fairchild semi
fdms8888.pdfpdf_icon

FDMS8848NZ

July 2011FDMS8888 NNNNN-Channel PowerTrench MOSFET 30 V, 21 A, 9.5 mFeaturesGeneral Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.5 Ahas been designed to minimize losses in powerThe FDMS8888andconversion application. Advancements in both silicon Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowe

Другие MOSFET... FDMS86201 , FDMS8622 , STM4952 , FDMS86252 , FDMS86300 , FDMS86322 , FDMS86500L , FDMS86520L , STP80NF70 , FDMS8888 , STM4886E , FDMS9620S , STM4886 , FDN302P , FDN304P , FDN304PZ , FDN306P .

History: STL8N10F7 | BSC032N03SG | NCE1520 | BF964S | 8N65KL-TA3-T | IRFR220BTMFP001 | CPH3360

 

 
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