FDMS9620S Todos los transistores

 

FDMS9620S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMS9620S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 10 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0215 Ohm
   Paquete / Cubierta: POWER56

 Búsqueda de reemplazo de MOSFET FDMS9620S

 

FDMS9620S Datasheet (PDF)

 ..1. Size:334K  fairchild semi
fdms9620s.pdf

FDMS9620S
FDMS9620S

July 2007FDMS9620StmDual N-Channel PowerTrench MOSFET Q1: 30V, 16A, 21.5m Q2: 30V, 18A, 13mFeaturesQ1: N-ChannelGeneral Description Max rDS(on) = 21.5m at VGS = 10V, ID = 7.5AThis device includes two specialized MOSFETs in a unique dual Max rDS(on) = 29.5m at VGS = 4.5V, ID = 6.5APower 56 package. It is designed to provide an optimal Q2: N-ChannelSynchronous

 ..2. Size:395K  onsemi
fdms9620s.pdf

FDMS9620S
FDMS9620S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:351K  fairchild semi
fdms9600s.pdf

FDMS9620S
FDMS9620S

May 2014FDMS9600SDual N-Channel PowerTrench MOSFET Q1: 30V, 32A, 8.5m Q2: 30V, 30A, 5.5m Features General DescriptionQ1: N-ChannelThis device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Max rDS(on) = 8.5m at VGS = 10V, ID = 12ASynchronous Buck power stage in terms of efficiency and PCB Max rDS(on) = 12.4m at

 8.2. Size:404K  onsemi
fdms9600s.pdf

FDMS9620S
FDMS9620S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:567K  fairchild semi
fdms9408 f085.pdf

FDMS9620S
FDMS9620S

December 2014FDMS9408_F085N-Channel PowerTrench MOSFET40 V, 80 A, 1.8 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 71 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcurre

Otros transistores... FDMS86252 , FDMS86300 , FDMS86322 , FDMS86500L , FDMS86520L , FDMS8848NZ , FDMS8888 , STM4886E , IRFB3607 , STM4886 , FDN302P , FDN304P , FDN304PZ , FDN306P , FDN308P , FDN327N , FDN342P .

 

 
Back to Top

 


FDMS9620S
  FDMS9620S
  FDMS9620S
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top