FDMS9620S MOSFET Datasheet: N-Ch, 30V, 16A. Full specification with pinout and replacement list

FDMS9620S Specs and Replacement

Type Designator: FDMS9620S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0215 Ohm

Package: POWER56

FDMS9620S substitution

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FDMS9620S datasheet

..1. Size:334K fairchild semi
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July 2007 FDMS9620S tm Dual N-Channel PowerTrench MOSFET Q1 30V, 16A, 21.5m Q2 30V, 18A, 13m Features Q1 N-Channel General Description Max rDS(on) = 21.5m at VGS = 10V, ID = 7.5A This device includes two specialized MOSFETs in a unique dual Max rDS(on) = 29.5m at VGS = 4.5V, ID = 6.5A Power 56 package. It is designed to provide an optimal Q2 N-Channel Synchronous... See More ⇒

..2. Size:395K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

8.1. Size:351K fairchild semi
fdms9600s.pdf pdf_icon

May 2014 FDMS9600S Dual N-Channel PowerTrench MOSFET Q1 30V, 32A, 8.5m Q2 30V, 30A, 5.5m Features General Description Q1 N-Channel This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Max rDS(on) = 8.5m at VGS = 10V, ID = 12A Synchronous Buck power stage in terms of efficiency and PCB Max rDS(on) = 12.4m at... See More ⇒

8.2. Size:404K onsemi
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