FDN327N Todos los transistores

October 2001 FDN327N N-Channel 1.8 Vgs Specified PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild s high 2 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 V voltage PowerTrench process. It has been optimized for RDS(ON) = 80 m @ VGS = 2.5 V power management applications. RDS(ON) = 120 m @ VGS = 1.8 V Applications Low gate charg

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDN327N N-Channel Enhancement Mode MOSFET Feature 20V/3.0A, RDS(ON) = 80m (MAX) @VGS = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Rati