FDN327N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDN327N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 87 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: SSOT3

Búsqueda de reemplazo de MOSFET FDN327N

FDN327N Datasheet (PDF)

..1. Size:84K fairchild semi
fdn327n.pdf

October 2001FDN327NN-Channel 1.8 Vgs Specified PowerTrench MOSFETGeneral Description FeaturesThis 20V N-Channel MOSFET uses Fairchilds high 2 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 Vvoltage PowerTrench process. It has been optimized forRDS(ON) = 80 m @ VGS = 2.5 V power management applications. RDS(ON) = 120 m @ VGS = 1.8 VApplications Low gate charg

..2. Size:199K onsemi
fdn327n.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..3. Size:1244K kexin
fdn327n.pdf

SMD Type MOSFETN-Channel MOSFETFDN327N (KDN327N)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 VDS (V) = 20V ID = 2 A RDS(ON) 70m (VGS = 4.5V)1 2 RDS(ON) 80m (VGS = 2.5V)+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 120m (VGS = 1.8V) +0.11.9-0.11. Gate2. SourceD3. DrainG S Absolute Maximum Ratings Ta = 25

..4. Size:625K cn shikues
fdn327n.pdf

FDN327NN-Channel Enhancement Mode MOSFETFeature 20V/3.0A, RDS(ON) = 80m(MAX) @VGS = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Rati

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: