October 2001FDN327NN-Channel 1.8 Vgs Specified PowerTrench MOSFETGeneral Description FeaturesThis 20V N-Channel MOSFET uses Fairchilds high 2 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 Vvoltage PowerTrench process. It has been optimized forRDS(ON) = 80 m @ VGS = 2.5 V power management applications. RDS(ON) = 120 m @ VGS = 1.8 VApplications Low gate charg

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETN-Channel MOSFETFDN327N (KDN327N)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 VDS (V) = 20V ID = 2 A RDS(ON) 70m (VGS = 4.5V)1 2 RDS(ON) 80m (VGS = 2.5V)+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 120m (VGS = 1.8V) +0.11.9-0.11. Gate2. SourceD3. DrainG S Absolute Maximum Ratings Ta = 25

FDN327NN-Channel Enhancement Mode MOSFETFeature 20V/3.0A, RDS(ON) = 80m(MAX) @VGS = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Rati