STM4884 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STM4884
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 43 nS
Cossⓘ - Capacitancia de salida: 410 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: SO8
- Selección de transistores por parámetros
STM4884 Datasheet (PDF)
stm4884.pdf
GrerrPPrPrProSTM4884SamHop Micrpelectronics Corp.Ver 3.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) TypRugged and reliable.5.5 @VGS=10VSuface Mount Package.30V 13A8.5 @VGS=4.5VD 5 4 G6 3D S7 2D SSO-8D 8 1S1(TA=25C unless otherwise
stm4884a.pdf
S T M4884AS amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) typ R ugged and reliable.6 @ V G S = 10V30V 12AS urface Mount Package.8.5 @ V G S = 4.5VS O-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwis
stm4880.pdf
STM4880aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17 @ VGS=10VSuface Mount Package.30V 9.6A26 @ VGS=4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)ABSOLU
stm4886e.pdf
GreenProductSTM4886EaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.5 @ VGS=10VSuface Mount Package.30V 17.8A7.5 @ VGS=4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless other
Otros transistores... FDN306P , FDN308P , FDN327N , FDN342P , FDN352AP , FDN359BN , STM4884A , FDN361BN , AON6380 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 , STM4840 , FDN86246 , FDP025N06 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
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