All MOSFET. STM4884 Datasheet

 

STM4884 Datasheet and Replacement


   Type Designator: STM4884
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: SO8
 
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STM4884 Datasheet (PDF)

 ..1. Size:92K  samhop
stm4884.pdf pdf_icon

STM4884

GrerrPPrPrProSTM4884SamHop Micrpelectronics Corp.Ver 3.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) TypRugged and reliable.5.5 @VGS=10VSuface Mount Package.30V 13A8.5 @VGS=4.5VD 5 4 G6 3D S7 2D SSO-8D 8 1S1(TA=25C unless otherwise

 0.1. Size:697K  samhop
stm4884a.pdf pdf_icon

STM4884

S T M4884AS amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) typ R ugged and reliable.6 @ V G S = 10V30V 12AS urface Mount Package.8.5 @ V G S = 4.5VS O-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwis

 8.1. Size:165K  samhop
stm4880.pdf pdf_icon

STM4884

STM4880aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17 @ VGS=10VSuface Mount Package.30V 9.6A26 @ VGS=4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)ABSOLU

 8.2. Size:182K  samhop
stm4886e.pdf pdf_icon

STM4884

GreenProductSTM4886EaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.5 @ VGS=10VSuface Mount Package.30V 17.8A7.5 @ VGS=4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless other

Datasheet: FDN306P , FDN308P , FDN327N , FDN342P , FDN352AP , FDN359BN , STM4884A , FDN361BN , AON6380 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 , STM4840 , FDN86246 , FDP025N06 .

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