FDN5618P Datasheet. Equivalente

 ..1. Size:213K  fairchild semi
 fdn5618p.pdf

 ..2. Size:292K  onsemi
 fdn5618p.pdf

FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses ON 1.25 A, 60 V. RDS(ON) = 0.170 @ VGS = 10 V Semiconductor s high voltage PowerTrench process. It RDS(ON) = 0.230 @ VGS = 4.5 V has been optimized for power management applications. Fast switching speed Applications Hi

 9.1. Size:260K  fairchild semi
 fdn5632n f085.pdf

September 2008 FDN5632N_F085 tm N-Channel Logic Level PowerTrench MOSFET 60V, 1.6A, 98m Features Applications RDS(on) = 98m at VGS = 4.5V, ID = 1.6A DC/DC converter RDS(on) = 82m at VGS = 10V, ID = 1.7A Motor Drives Typ Qg(TOT) = 9.2nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant 2008 Fairchild Semiconductor Corporation 1 www.fairchild

 9.2. Size:91K  fairchild semi
 fdn5630.pdf

March 2000 FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically 1.7 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.120 @ VGS = 6 V. either synchronous or conventional switching PWM Optimized for use in high frequenc

 9.3. Size:599K  onsemi
 fdn5632n-f085.pdf

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.4. Size:944K  kexin
 fdn5630-3.pdf

SMD Type MOSFET N-Channel MOSFET FDN5630 (KDN5630) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 1.7 A (VGS = 10V) 1 2 RDS(ON) 100m (VGS = 10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 120m (VGS = 6V) 1. Gate D 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

 9.5. Size:1125K  kexin
 fdn5630.pdf

SMD Type MOSFET N-Channel MOSFET FDN5630 (KDN5630) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 1.7 A (VGS = 10V) 1 2 RDS(ON) 100m (VGS = 10V) +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 120m (VGS = 6V) +0.1 1.9-0.1 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

 9.6. Size:1473K  cn vbsemi
 fdn5630.pdf

FDN5630 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1