FDP030N06 Todos los transistores

 ..1. Size:482K  fairchild semi
 fdp030n06.pdf

June 2009 FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2m Features Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance.

 ..2. Size:911K  onsemi
 fdp030n06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:257K  inchange semiconductor
 fdp030n06.pdf

isc N-Channel MOSFET Transistor FDP030N06 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 0.1. Size:641K  fairchild semi
 fdp030n06b f102.pdf

November 2013 FDP030N06B_F102 N-Channel PowerTrench MOSFET 60 V, 195 A, 3.1 m Features Description RDS(on) = 2.67 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching perfor

 0.2. Size:748K  onsemi
 fdp030n06b f102.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:247K  fairchild semi
 fdp036n10a.pdf

July 2011 FDP036N10A tm N-Channel PowerTrench MOSFET 100V, 214A, 3.6m Features Description RDS(on) = 3.2m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performa

 9.2. Size:691K  fairchild semi
 fdp039n08b.pdf

November 2013 FDP039N08B N-Channel PowerTrench MOSFET 80 V, 171 A, 3.9 m Features Description RDS(on) = 3.16 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching performance

 9.3. Size:619K  fairchild semi
 fdp032n08.pdf

July 2008 FDP032N08 tm N-Channel PowerTrench MOSFET 75V, 235A, 3.2m Features Description RDS(on) = 2.5m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s adcanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superi

 9.4. Size:669K  fairchild semi
 fdp032n08b.pdf

November 2013 FDP032N08B N-Channel PowerTrench MOSFET 80 V, 211 A, 3.3 m Features Description RDS(on) = 2.85 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching performance.

 9.5. Size:332K  fairchild semi
 fdp038an06a0 fdi038an06a0.pdf

December 2010 FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8m Features Applications rDS(ON) = 3.5m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive P

 9.6. Size:673K  onsemi
 fdp036n10a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.7. Size:799K  onsemi
 fdp039n08b.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.8. Size:517K  onsemi
 fdp032n08.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.9. Size:953K  onsemi
 fdp032n08b.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.10. Size:586K  onsemi
 fdp038an06a0 fdi038an06a0.pdf

 9.11. Size:289K  inchange semiconductor
 fdp038an06a0.pdf

isc N-Channel MOSFET Transistor FDP038AN06A0 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 9.12. Size:284K  inchange semiconductor
 fdp036n10a.pdf

isc N-Channel MOSFET Transistor FDP036N10A FEATURES With TO-220 packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 4.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 9.13. Size:284K  inchange semiconductor
 fdp036n10a .pdf

isc N-Channel MOSFET Transistor FDP036N10A FEATURES With TO-220 packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 3.6m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 9.14. Size:257K  inchange semiconductor
 fdp032n08.pdf

isc N-Channel MOSFET Transistor FDP032N08 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA