FDP030N06 PDF and Equivalents Search

 

FDP030N06 Specs and Replacement

Type Designator: FDP030N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 231 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 193 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO220

FDP030N06 substitution

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FDP030N06 datasheet

 ..1. Size:482K  fairchild semi
fdp030n06.pdf pdf_icon

FDP030N06

June 2009 FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2m Features Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance. ... See More ⇒

 ..2. Size:911K  onsemi
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FDP030N06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:257K  inchange semiconductor
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FDP030N06

isc N-Channel MOSFET Transistor FDP030N06 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒

 0.1. Size:641K  fairchild semi
fdp030n06b f102.pdf pdf_icon

FDP030N06

November 2013 FDP030N06B_F102 N-Channel PowerTrench MOSFET 60 V, 195 A, 3.1 m Features Description RDS(on) = 2.67 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching perfor... See More ⇒

Detailed specifications: FDN372S, STM4880, FDN5618P, FDN5630, FDN8601, STM4840, FDN86246, FDP025N06, 75N75, FDP032N08, FDP036N10A, STM4639, FDP038AN06A0, FDP040N06, FDP045N10AF102, STM4637, FDP047N08

Keywords - FDP030N06 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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