ASDM30N55E-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ASDM30N55E-R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 31.6 nC
trⓘ - Tiempo de subida: 49 nS
Cossⓘ - Capacitancia de salida: 410 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: DFN3.3X3.3-8L
Búsqueda de reemplazo de MOSFET ASDM30N55E-R
ASDM30N55E-R Datasheet (PDF)
asdm30n55e-r.pdf
ASDM30N55E30V N-CHANNEL MOSFETFeatureProduct Summary100% EAS GuaranteedVDS 30 VGreen Device AvailableSuper Low Gate ChargeRDS(on),typ VGS=10V 4.8 mExcellent CdV/dt effect declineA55IDAdvanced high cell density Trench technologyApplication Power Management in Inverter Systemtop viewDFN3.3*3.3-8Maximum ratings, at T A=25 C, unless othe
asdm30n55e.pdf
ASDM30N55E30V N-CHANNEL MOSFETFeatureProduct Summary100% EAS GuaranteedVDS 30 VGreen Device AvailableSuper Low Gate ChargeRDS(on),typ VGS=10V 4.8 mExcellent CdV/dt effect declineA55IDAdvanced high cell density Trench technologyApplication Power Management in Inverter Systemtop viewDFN3.3*3.3-8Maximum ratings, at T A=25 C, unless othe
asdm30n65e-r.pdf
ASDM30N65E30V N-CHANNEL MOSFETProduct SummaryFeaturel Low Gate Charge VDS 30 Vl Green Device Available4.5 mRDS(on),typ VGS=10Vl Super Low Gate ChargeA65IDl Excellent CdV/dt effect declinel Advanced high cell density Trench technologyApplicationsl Power Management in Desktop Computer or DC/DCConverters.l Isolated DC/DC Converters in Telecom and Industrial.
asdm30n65e.pdf
ASDM30N65E30V N-CHANNEL MOSFETProduct SummaryFeaturel Low Gate Charge VDS 30 Vl Green Device Available4.5 mRDS(on),typ VGS=10Vl Super Low Gate ChargeA65IDl Excellent CdV/dt effect declinel Advanced high cell density Trench technologyApplicationsl Power Management in Desktop Computer or DC/DCConverters.l Isolated DC/DC Converters in Telecom and Industrial.
asdm30n90kq.pdf
ASDM30N90KQ30V N-Channel MOSFETGeneral Features Product Summary Low Gate Charge Advanced Trench TechnologyVDS 30 V Provide Excellent RDS(ON)RDS(on),Typ.@ VGS=10 V 3.6 m High Power and Current Handling Capability90ID A Application Load Swtich PWM applications Power management1TO-252N-channelAbsolute Maximum Ratings (TA =25C unless o
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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