ASDM30N55E-R - описание и поиск аналогов

ASDM30N55E 30V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed VDS 30 V Green Device Available Super Low Gate Charge RDS(on),typ VGS=10V 4.8 m Excellent CdV/dt effect decline A 55 ID Advanced high cell density Trench technology Application Power Management in Inverter System top view DFN3.3*3.3-8 Maximum ratings, at T A=25 C, unless othe

ASDM30N55E 30V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed VDS 30 V Green Device Available Super Low Gate Charge RDS(on),typ VGS=10V 4.8 m Excellent CdV/dt effect decline A 55 ID Advanced high cell density Trench technology Application Power Management in Inverter System top view DFN3.3*3.3-8 Maximum ratings, at T A=25 C, unless othe

ASDM30N65E 30V N-CHANNEL MOSFET Product Summary Feature l Low Gate Charge VDS 30 V l Green Device Available 4.5 m RDS(on),typ VGS=10V l Super Low Gate Charge A 65 ID l Excellent CdV/dt effect decline l Advanced high cell density Trench technology Applications l Power Management in Desktop Computer or DC/DC Converters. l Isolated DC/DC Converters in Telecom and Industrial.

ASDM30N65E 30V N-CHANNEL MOSFET Product Summary Feature l Low Gate Charge VDS 30 V l Green Device Available 4.5 m RDS(on),typ VGS=10V l Super Low Gate Charge A 65 ID l Excellent CdV/dt effect decline l Advanced high cell density Trench technology Applications l Power Management in Desktop Computer or DC/DC Converters. l Isolated DC/DC Converters in Telecom and Industrial.

ASDM30N90KQ 30V N-Channel MOSFET General Features Product Summary Low Gate Charge Advanced Trench Technology VDS 30 V Provide Excellent RDS(ON) RDS(on),Typ.@ VGS=10 V 3.6 m High Power and Current Handling Capability 90 ID A Application Load Swtich PWM applications Power management 1 TO-252 N-channel Absolute Maximum Ratings (TA =25 C unless o