ASDM30N65E-R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ASDM30N65E-R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18.8 nS
Cossⓘ - Capacitancia de salida: 436 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
Encapsulados: DFN3.3X3.3-8L
Búsqueda de reemplazo de ASDM30N65E-R MOSFET
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ASDM30N65E-R datasheet
asdm30n65e-r.pdf
ASDM30N65E 30V N-CHANNEL MOSFET Product Summary Feature l Low Gate Charge VDS 30 V l Green Device Available 4.5 m RDS(on),typ VGS=10V l Super Low Gate Charge A 65 ID l Excellent CdV/dt effect decline l Advanced high cell density Trench technology Applications l Power Management in Desktop Computer or DC/DC Converters. l Isolated DC/DC Converters in Telecom and Industrial.
asdm30n65e.pdf
ASDM30N65E 30V N-CHANNEL MOSFET Product Summary Feature l Low Gate Charge VDS 30 V l Green Device Available 4.5 m RDS(on),typ VGS=10V l Super Low Gate Charge A 65 ID l Excellent CdV/dt effect decline l Advanced high cell density Trench technology Applications l Power Management in Desktop Computer or DC/DC Converters. l Isolated DC/DC Converters in Telecom and Industrial.
asdm30n55e-r.pdf
ASDM30N55E 30V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed VDS 30 V Green Device Available Super Low Gate Charge RDS(on),typ VGS=10V 4.8 m Excellent CdV/dt effect decline A 55 ID Advanced high cell density Trench technology Application Power Management in Inverter System top view DFN3.3*3.3-8 Maximum ratings, at T A=25 C, unless othe
asdm30n90kq.pdf
ASDM30N90KQ 30V N-Channel MOSFET General Features Product Summary Low Gate Charge Advanced Trench Technology VDS 30 V Provide Excellent RDS(ON) RDS(on),Typ.@ VGS=10 V 3.6 m High Power and Current Handling Capability 90 ID A Application Load Swtich PWM applications Power management 1 TO-252 N-channel Absolute Maximum Ratings (TA =25 C unless o
Otros transistores... AP80N04G , AP80N04Q , AP90N03Q , AP90P03G , AP90P03Q , APG077N01G , APG095N01G , ASDM30N55E-R , IRLZ44N , ASDM30P11TD-R , ASDM30P30CTD-R , ASDM40N52E-R , AUIRFN8405TR , CJAC100SN08U , CJAC110SN10A , CJAC80SN10 , DMN3009LFVW-7 .
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