ASDM30N65E-R MOSFET. Datasheet pdf. Equivalent
Type Designator: ASDM30N65E-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 18.8 nS
Cossⓘ - Output Capacitance: 436 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: DFN3.3X3.3-8L
ASDM30N65E-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ASDM30N65E-R Datasheet (PDF)
asdm30n65e-r.pdf
ASDM30N65E30V N-CHANNEL MOSFETProduct SummaryFeaturel Low Gate Charge VDS 30 Vl Green Device Available4.5 mRDS(on),typ VGS=10Vl Super Low Gate ChargeA65IDl Excellent CdV/dt effect declinel Advanced high cell density Trench technologyApplicationsl Power Management in Desktop Computer or DC/DCConverters.l Isolated DC/DC Converters in Telecom and Industrial.
asdm30n65e.pdf
ASDM30N65E30V N-CHANNEL MOSFETProduct SummaryFeaturel Low Gate Charge VDS 30 Vl Green Device Available4.5 mRDS(on),typ VGS=10Vl Super Low Gate ChargeA65IDl Excellent CdV/dt effect declinel Advanced high cell density Trench technologyApplicationsl Power Management in Desktop Computer or DC/DCConverters.l Isolated DC/DC Converters in Telecom and Industrial.
asdm30n55e-r.pdf
ASDM30N55E30V N-CHANNEL MOSFETFeatureProduct Summary100% EAS GuaranteedVDS 30 VGreen Device AvailableSuper Low Gate ChargeRDS(on),typ VGS=10V 4.8 mExcellent CdV/dt effect declineA55IDAdvanced high cell density Trench technologyApplication Power Management in Inverter Systemtop viewDFN3.3*3.3-8Maximum ratings, at T A=25 C, unless othe
asdm30n90kq.pdf
ASDM30N90KQ30V N-Channel MOSFETGeneral Features Product Summary Low Gate Charge Advanced Trench TechnologyVDS 30 V Provide Excellent RDS(ON)RDS(on),Typ.@ VGS=10 V 3.6 m High Power and Current Handling Capability90ID A Application Load Swtich PWM applications Power management1TO-252N-channelAbsolute Maximum Ratings (TA =25C unless o
asdm30n55e.pdf
ASDM30N55E30V N-CHANNEL MOSFETFeatureProduct Summary100% EAS GuaranteedVDS 30 VGreen Device AvailableSuper Low Gate ChargeRDS(on),typ VGS=10V 4.8 mExcellent CdV/dt effect declineA55IDAdvanced high cell density Trench technologyApplication Power Management in Inverter Systemtop viewDFN3.3*3.3-8Maximum ratings, at T A=25 C, unless othe
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
