DMP22M2UPS-13 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMP22M2UPS-13
   Código: P22M2US
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 476 nC
   trⓘ - Tiempo de subida: 35.4 nS
   Cossⓘ - Capacitancia de salida: 2547 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: POWERDI5060-8

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DMP22M2UPS-13 Datasheet (PDF)

..1. Size:647K 1
dmp22m2ups-13.pdf

DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

4.1. Size:596K diodes
dmp22m2ups.pdf

9.1. Size:349K diodes
dmp2200ufcl.pdf

DMP2200UFCLDual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Typical off board profile of 0.5mm - ideally suited for thin V(BR)DSS RDS(on) max ID max applications 200m @VGS = -4.5V -1.7 A Low RDS(ON) minimizes conduction losses 290m @VGS = -2.5V -1.3 A -20V PCB footprint of 2.56mm2 390m @VGS = -1.8V -1.1 A Totally Lead-Free & Fully RoHS Co

9.2. Size:324K diodes
dmp2200udw.pdf

DMP2200UDW Dual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Low RDS(ON) Minimizes Conduction Losses V(BR)DSS RDS(on) max ID max Low Input Capacitance 260m @VGS = -4.5V Fast Switching Speed -20V 500m @VGS = -2.5V -0.9 A Low Input/Output Leakage 1000m @VGS = -1.8V ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes

9.3. Size:182K diodes
dmp2225l.pdf

DMP2225LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT23RDS(ON)

9.4. Size:139K diodes
dmp2215l.pdf

DMP2215LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

9.5. Size:458K diodes
dmp2240uwq.pdf

DMP2240UWQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = 25C Very Low Gate Threshold Voltage VGS(th) 1V Low Input Capacitance 150m @ VGS = -4.5V -1.5A Fast Switching Speed 200m @ VGS = -2.5V -1A Low Input/Output Leakage -20V Totally Lead-Free & Fully R

9.6. Size:162K diodes
dmp2240udm.pdf

DMP2240UDMDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 150 m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 200 m @ VGS = -2.5V Terminals C

9.7. Size:135K diodes
dmp22d6ut.pdf

DMP22D6UTP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D

9.8. Size:153K diodes
dmp22d4ufa.pdf

DMP22D4UFA20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package height ID max V(BR)DSS RDS(ON) max 0.48mm2 package footprint, 16 times smaller than SOT23 TA = 25C Low On-Resistance1.9 @ VGS = -4.5V -330mA Very low Gate Threshold Voltage, 1.0V max 2.4 @ VGS = -2.5V -300mA ESD Prot

9.9. Size:159K diodes
dmp2240uw.pdf

DMP2240UWP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: SOT-323 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 150 m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 200 m @ VGS = -2.5V Terminals Connections

9.10. Size:80K tysemi
dmp2215l.pdf

Product specificationDMP2215LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

9.11. Size:830K cn vbsemi
dmp2240uw.pdf

DMP2240UWwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conver

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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