Справочник MOSFET. DMP22M2UPS-13

 

DMP22M2UPS-13 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMP22M2UPS-13
   Маркировка: P22M2US
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 476 nC
   trⓘ - Время нарастания: 35.4 ns
   Cossⓘ - Выходная емкость: 2547 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
   Тип корпуса: POWERDI5060-8

 Аналог (замена) для DMP22M2UPS-13

 

 

DMP22M2UPS-13 Datasheet (PDF)

 ..1. Size:647K  1
dmp22m2ups-13.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

 4.1. Size:596K  diodes
dmp22m2ups.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

 9.1. Size:349K  diodes
dmp2200ufcl.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP2200UFCLDual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Typical off board profile of 0.5mm - ideally suited for thin V(BR)DSS RDS(on) max ID max applications 200m @VGS = -4.5V -1.7 A Low RDS(ON) minimizes conduction losses 290m @VGS = -2.5V -1.3 A -20V PCB footprint of 2.56mm2 390m @VGS = -1.8V -1.1 A Totally Lead-Free & Fully RoHS Co

 9.2. Size:324K  diodes
dmp2200udw.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP2200UDW Dual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Low RDS(ON) Minimizes Conduction Losses V(BR)DSS RDS(on) max ID max Low Input Capacitance 260m @VGS = -4.5V Fast Switching Speed -20V 500m @VGS = -2.5V -0.9 A Low Input/Output Leakage 1000m @VGS = -1.8V ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes

 9.3. Size:182K  diodes
dmp2225l.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP2225LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT23RDS(ON)

 9.4. Size:139K  diodes
dmp2215l.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP2215LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

 9.5. Size:458K  diodes
dmp2240uwq.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP2240UWQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = 25C Very Low Gate Threshold Voltage VGS(th) 1V Low Input Capacitance 150m @ VGS = -4.5V -1.5A Fast Switching Speed 200m @ VGS = -2.5V -1A Low Input/Output Leakage -20V Totally Lead-Free & Fully R

 9.6. Size:162K  diodes
dmp2240udm.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP2240UDMDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 150 m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 200 m @ VGS = -2.5V Terminals C

 9.7. Size:135K  diodes
dmp22d6ut.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP22D6UTP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D

 9.8. Size:153K  diodes
dmp22d4ufa.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP22D4UFA20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package height ID max V(BR)DSS RDS(ON) max 0.48mm2 package footprint, 16 times smaller than SOT23 TA = 25C Low On-Resistance1.9 @ VGS = -4.5V -330mA Very low Gate Threshold Voltage, 1.0V max 2.4 @ VGS = -2.5V -300mA ESD Prot

 9.9. Size:159K  diodes
dmp2240uw.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP2240UWP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: SOT-323 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 150 m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 200 m @ VGS = -2.5V Terminals Connections

 9.10. Size:80K  tysemi
dmp2215l.pdf

DMP22M2UPS-13
DMP22M2UPS-13

Product specificationDMP2215LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

 9.11. Size:830K  cn vbsemi
dmp2240uw.pdf

DMP22M2UPS-13
DMP22M2UPS-13

DMP2240UWwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conver

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top