DMP3007SPS-13 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMP3007SPS-13
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.3 nS
Cossⓘ - Capacitancia de salida: 606 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Encapsulados: POWERDI5060-8
Búsqueda de reemplazo de DMP3007SPS-13 MOSFET
- Selecciónⓘ de transistores por parámetros
DMP3007SPS-13 datasheet
dmp3007sps-13.pdf
DMP3007SPS Green P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro
dmp3007sps.pdf
DMP3007SPS Green P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro
dmp3007scg.pdf
DMP3007SCG 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On State Losses are Minimized BVDSS RDS(ON) Max TC = +25 C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 6.8m @ VGS = -10V -50A -30V Occupies Just 33% of the Board Area Occupied by SO-8 Enabling 13m @
dmp3008sfg.pdf
DMP3008SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25 C density end products 17m @ VGS = -10V -8.6A Occupies just 33% of the board area occupied by SO-8 enabling -3
Otros transistores... CJAC80SN10, DMN3009LFVW-7, DMN3010LFG-7, DMN3016LPS-13, DMNH10H028SPSQ-13, DMNH4006SPSQ-13, DMP2002UPS-13, DMP22M2UPS-13, IRF630, DMP3010LPSQ-13, DMP3013SFV-13, DMP3013SFV-7, DMP3017SFV-7, DMP4015SPS-13, DMT10H015LPS-13, DMT3006LFV-7, DMT3006LPS-13
History: NVMFD024N06C
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
2n3645 | 2n1307 | 2sa747 | a1941 | 2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent | tip122 transistor equivalent
