DMP3007SPS-13 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMP3007SPS-13

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.3 nS

Cossⓘ - Capacitancia de salida: 606 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: POWERDI5060-8

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DMP3007SPS-13 datasheet

 ..1. Size:531K  1
dmp3007sps-13.pdf pdf_icon

DMP3007SPS-13

DMP3007SPS Green P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro

 4.1. Size:531K  diodes
dmp3007sps.pdf pdf_icon

DMP3007SPS-13

DMP3007SPS Green P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro

 6.1. Size:435K  diodes
dmp3007scg.pdf pdf_icon

DMP3007SPS-13

DMP3007SCG 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On State Losses are Minimized BVDSS RDS(ON) Max TC = +25 C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 6.8m @ VGS = -10V -50A -30V Occupies Just 33% of the Board Area Occupied by SO-8 Enabling 13m @

 8.1. Size:195K  diodes
dmp3008sfg.pdf pdf_icon

DMP3007SPS-13

DMP3008SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25 C density end products 17m @ VGS = -10V -8.6A Occupies just 33% of the board area occupied by SO-8 enabling -3

Otros transistores... CJAC80SN10, DMN3009LFVW-7, DMN3010LFG-7, DMN3016LPS-13, DMNH10H028SPSQ-13, DMNH4006SPSQ-13, DMP2002UPS-13, DMP22M2UPS-13, IRF630, DMP3010LPSQ-13, DMP3013SFV-13, DMP3013SFV-7, DMP3017SFV-7, DMP4015SPS-13, DMT10H015LPS-13, DMT3006LFV-7, DMT3006LPS-13