DMP3007SPS-13 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DMP3007SPS-13
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 80 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 4.3 ns
Cossⓘ - Выходная емкость: 606 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: POWERDI5060-8
- подбор MOSFET транзистора по параметрам
DMP3007SPS-13 Datasheet (PDF)
dmp3007sps-13.pdf

DMP3007SPS GreenP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro
dmp3007sps.pdf

DMP3007SPS GreenP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro
dmp3007scg.pdf

DMP3007SCG 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On State Losses are Minimized BVDSS RDS(ON) Max TC = +25C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 6.8m @ VGS = -10V -50A -30V Occupies Just 33% of the Board Area Occupied by SO-8 Enabling 13m @
dmp3008sfg.pdf

DMP3008SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25C density end products 17m @ VGS = -10V -8.6A Occupies just 33% of the board area occupied by SO-8 enabling -3
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: RSS065N06FU6TB | BUK9M120-100E | BLF7G21LS-160P | BRCS1C0P06DSC | SSF2300B | IRLU7843PBF | WMK10N100C2
History: RSS065N06FU6TB | BUK9M120-100E | BLF7G21LS-160P | BRCS1C0P06DSC | SSF2300B | IRLU7843PBF | WMK10N100C2



Список транзисторов
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