DMT3009LFVW-7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMT3009LFVW-7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.2 nS

Cossⓘ - Capacitancia de salida: 352 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: POWERDI3333-8

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DMT3009LFVW-7 datasheet

 ..1. Size:520K  1
dmt3009lfvw-7.pdf pdf_icon

DMT3009LFVW-7

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by

 3.1. Size:520K  diodes
dmt3009lfvw.pdf pdf_icon

DMT3009LFVW-7

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by

 6.1. Size:449K  diodes
dmt3009ldt.pdf pdf_icon

DMT3009LFVW-7

DMT3009LDT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low Gate Threshold Voltage Device BVDSS RDS(ON) Max TC = +25 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) C (Note 10) Halogen and Antimony Free. Green Device (Note 3) 11.1m @ VGS = 10V 30A Q1 & Q2 30V 13.8m @ VGS = 4.5V 28A 22.0m @ VGS = 3.8V 22A

 8.1. Size:337K  1
dmt3006lps-13.pdf pdf_icon

DMT3009LFVW-7

DMT3006LPS Green N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25 C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

Otros transistores... DMP3010LPSQ-13, DMP3013SFV-13, DMP3013SFV-7, DMP3017SFV-7, DMP4015SPS-13, DMT10H015LPS-13, DMT3006LFV-7, DMT3006LPS-13, AO3401, DMT31M6LPS-13, DMT32M5LPS-13, DMT6004LPS-13, DMT6005LPS-13, DMT6009LPS-13, DMT6016LPS-13, DMTH4007LPS-13, DMTH6002LPS-13